价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | BU932R | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions
·High voltage ignition coil driver
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 450 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current | 15 | A |
ICM | Collector Current-peak | 30 | A |
IB | Base Current | 1 | A |
IBM | Base Current-peak | 5 | A |
PC | Collector Power Dissipation @TC=25℃ | 60 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -40~150 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance, Junction to Case | 2.08 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.1A; IB= 0; L= 10mH | 450 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 8 A; IB= 150mA |
|
| 1.8 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 8 A; IB= 150mA |
|
| 2.2 | V |
ICES | Collector Cutoff Current | VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ |
|
| 1.0 5.0 | mA |
ICEO | Collector Cutoff Current | VCE= 450V;IB= 0 |
|
| 1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 50 | mA |
hFE | DC Current Gain | IC= 5A; VCE= 10V | 300 |
|
|
|
VECF | C-E Diode Forward Voltage | IF= 10A |
|
| 2.8 | V |
DESCRIPTION ·Included Avalanche Diode-: VZ= 60±15V·High DC Current Gain: hFE= 2000~20000@ IC= 0.5A, VCE= 5V APPLICATIONS·Power regulator for line operated TV applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 60±15VVCEOCollector-Emitter Voltage 60±15VVEBOEmitter-Base Voltage6VICCollector Current-Continuous5AICMCollector Current-Pulse20APCCollector Power Dissipation@ TC=25℃80WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CBOCollector-Base Breakdown Voltage IC= 100mA; IE= 045 75VV(BR)CEOCollector-Emitter Breakdown VoltageIC= 100mA; IB= 045 75VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 0.5A; IB= 1mA 1.5VVCE(sat)-2Collector-Emitter Saturation VoltageIC= 1A; IB= 1m...
DESCRIPTION ·High Current Capability·Good Linearity of hFE·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min.)·Complement to Type 2SC2430 APPLICATIONS·Designed for power switching , high frequency poweramplifer, switching regulator and DC/DC converters. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-120VVCEOCollector-Emitter Voltage-120VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -10APCCollector Power Dissipation@TC=25℃100WTjJunction Temperature175℃TstgStorage Temperature-55~175℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -30mA; IB= 0-120 VV(BR)CBOCollector-Base Breakdown VoltageIC= -1mA; IE= 0-120 VV(BR)EBOEmitter-Base Breakdown VoltageIE= -1mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -5A; IB= -0.5A -1.2VVBE(sat)Base-Emitter Saturation VoltageIC= -...