无锡固电ISC 供应三极管2SB551
| 价 格： | 10.00 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC | |
| 型号/规格： | 2SB551 | |
| 应用范围： | 放大 | |
| 材料： | 硅(Si) | |
| 极性： | PNP型 | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 金属封装 |
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -1.2V(Typ.)@IC= -2A
·High Power Dissipation-
: PC= 25W(Max)@TC=55℃
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -50 | V |
VCEO | Collector-Emitter Voltage | -50 | V |
VEBO | Emitter-Base Voltage | -4 | V |
IC | Collector Current-Continuous | -3 | A |
PC | Collector Power Dissipation @TC= 25℃ | 25 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -45~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; RBE=∞ | -50 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -5mA; IE= 0 | -50 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -5mA; IC= 0 | -4 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -2A; IB= -0.2A |
|
| 1.2 | V |
VBE(on) | Base-Emitter On Voltage | IC= -1A; VCE= -4V |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= -20V; IE= 0 |
|
| -0.1 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -4V | 35 |
| 200 |
|
hFE-2 | DC Current Gain | IC= -0.1A; VCE= -4V | 35 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -4V | 15 |
|
| MHz |
u hFE-1Classifications
A | B | C |
35-70 | 60-120 | 100-200 |
- 所属城市：江苏 无锡
- [联系时请说明来自维库仪器仪表网]
- 联系人： 王燕
- 电话：0510-85346980
- 传真：0510-85346750
- 手机：15961889150
- QQ ：
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