价 格: | 3.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC/ISCSEMI | |
型号/规格: | 2N5497 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
集电极允许电流ICM: | 7(A) | |
集电极耗散功率PCM: | 50(W) | |
结构: | 点接触型 | |
封装形式: | TO-220 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 70V(Min)
·Low Saturation Voltage-
: VCE (sat)= 1V(Max)@IC= 3.5A
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 90 | V |
VCEV | Collector-Emitter Voltage VBE= -1.5V | 90 | V |
VCER | Collector-Emitter Voltage RBE= 100Ω | 80 | V |
VCEO | Collector-Emitter Voltage | 70 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 7 | A |
IB | Base Current | 3 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 1.8 | W |
Collector Power Dissipation @ TC=25℃ | 50 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -65~150 | ℃ |
iscSilicon NPN Power TransistorsDESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- MJE4340 = 120V(Min)- MJE4341= 140V(Min)- MJE4342= 160V(Min)- MJE4343·Low Saturation Voltage·Complement to Type MJE4350/4351/4352/4353 APPLICATIONS·Designed for use in high power audio amplifier applicationsand high voltage switching regulator circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector- BaseVoltage MJE4340100VMJE4341120MJE4342140MJE4343160VCEOCollector-EmitterVoltageMJE4340100VMJE4341120MJE4342140MJE4343160VEBOEmitter-Base Voltage7VICCollector Current-Continuous16AICMCollector Current-Peak 20AIBBase Current-Continuous 5APCCollector Power Dissipation@ TC=25℃125WTJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃
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