价 格: | 9.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SD1049 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·High Current Capability
·Fast Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·Motor controls
·High frequency inverters
·General purpose power amplifiers
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 120 | V |
VCEO | Collector-Emitter Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 25 | A |
IB | Base Current-Continuous | 5 | A |
PC | Collector Power Dissipation @TC=25℃ | 80 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA; IB= 0 | 80 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= 0.1mA; IE= 0 | 120 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 0.1mA; IC= 0 | 7 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 25A; IB= 2.5A |
|
| 1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 25A; IB= 2.5A |
|
| 2.0 | V |
ICBO | Collector Cutoff Current | VCB= 120V; IE= 0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 7V; IC= 0 |
|
| 0.1 | mA |
hFE | DC Current Gain | IC= 25A; VCE= 5V | 20 |
|
|
|
Switching times Resistive Load | ||||||
ton | Turn-on Time | IC= 25A; IB1= -IB2= 2.5A; RL= 3Ω, PW= 20μs; Duty≤2% |
|
| 1.0 | μs |
ts | Storage Time |
|
| 2.5 | μs | |
tf | Fall Time |
|
| 0.4 | μs |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 1.55 | ℃/W |
DESCRIPTION ·Low Collector Saturation Voltage-: VCE(sat)= -1.2V(Typ.)@IC= -2A·High Power Dissipation-: PC= 25W(Max)@TC=55℃ APPLICATIONS·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-50VVCEOCollector-Emitter Voltage-50VVEBOEmitter-Base Voltage-4VICCollector Current-Continuous-3APCCollector Power Dissipation@TC= 25℃25WTJJunction Temperature150℃TstgStorage Temperature-45~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA; RBE=∞-50 VV(BR)CBOCollector-Base Breakdown VoltageIC= -5mA; IE= 0-50 VV(BR)EBOEmitter-Base Breakdown VoltageIE= -5mA; IC= 0-4 VVCE(sat)Collector-Emitter Saturation VoltageIC= -2A; IB= -0.2A 1.2VVBE(on)Base-Emitter On VoltageIC= -1A; VCE= -4V 1.5VICBOCollector Cutoff CurrentVCB= -20V; IE= 0 ...
DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min)·Low Saturation Voltage-: VCE (sat)= 1V(Max)@IC= 3.5A APPLICATIONS·Designed for a wide variety of medium-power switching andamplifier applications , such as series and shunt regulatorsand driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 90VVCEVCollector-Emitter VoltageVBE= -1.5V 90VVCERCollector-Emitter VoltageRBE= 100Ω 80VVCEOCollector-Emitter Voltage 70VVEBOEmitter-Base Voltage5VICCollector Current-Continuous7AIBBase Current 3APCCollector Power Dissipation@ Ta=25℃1.8WCollector Power Dissipation@ TC=25℃50TJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃