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无锡固电ISC供应三极管2SD1049

价 格: 9.00
是否提供加工定制:
品牌/商标:ISC
型号/规格:2SD1049
应用范围:放大
材料:硅(Si)
极性:NPN型
结构:平面型
封装形式:直插型
封装材料:塑料封装

DESCRIPTION

·High Current Capability

·Fast Switching Speed

·High Reliability

 

 

APPLICATIONS

·Switching regulators

·Motor controls

·High frequency inverters

·General purpose power amplifiers

 

 

Absolute maximum ratings(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

25

A

IB

Base Current-Continuous

5

A

PC

Collector Power Dissipation

@TC=25

80

W

Tj

Junction Temperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA; IB= 0

80

 

 

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 0.1mA; IE= 0

120

 

 

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 0.1mA; IC= 0

7

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 25A; IB= 2.5A

 

 

1.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 25A; IB= 2.5A

 

 

2.0

V

ICBO

Collector Cutoff Current

VCB= 120V; IE= 0

 

 

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

 

 

0.1

mA

hFE

DC Current Gain

IC= 25A; VCE= 5V

20

 

 

 

Switching times Resistive Load

ton

Turn-on Time

IC= 25A; IB1= -IB2= 2.5A;

RL= 3Ω, PW= 20μs;

Duty2%

 

 

1.0

μs

ts

Storage Time

 

 

2.5

μs

tf

Fall Time

 

 

0.4

μs

 

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.55

/W


无锡固电半导体股份有限公司
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  • 所属城市:江苏 无锡
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  • 联系人: 王燕
  • 电话:0510-85346980
  • 传真:0510-85346750
  • 手机:15961889150
  • QQ :QQ:2207083234QQ:983830626
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