供应大量AO7800场效应管MOS N沟
| 价 格： | 面议 | |
| 品牌/商标： | Alpha/阿尔法 | |
| 型号/规格： | AO7800 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | MOS-HBM/半桥组件 | |
| 封装外形： | SMD(SO)/表面封装 | |
| 材料： | GE-N-FET锗N沟道 | |
| 开启电压： | 20（V） | |
| 夹断电压： | 8（V） | |
| 低频跨导： | 4（μS） | |
| 极间电容： | 120（pF） | |
| 漏极电流： | 1（mA） | |
| 耗散功率： | 0.9（mW） |
AO7800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7800 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.It
is ESD protected. Standard Product AO7800 is Pbfree
(meets ROHS & Sony 259 specifications).
AO7800L is a Green Product ordering option.
AO7800 and AO7800L are electrically identical
Features
VDS (V) = 20V
ID = 0.9 A (VGS = 4.5V)
RDS(ON) < 300mΩ (VGS = 4.5V)
RDS(ON) < 350mΩ (VGS = 2.5V)
RDS(ON) < 450mΩ (VGS = 1.8V)
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