价 格: | 0.17 | |
品牌/商标: | 仙童、台湾SIPU | |
型号/规格: | NDS7002 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | MOS-ARR/陈列组件 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | ALGaAS铝镓砷 | |
开启电压: | 60(V) | |
低频跨导: | 20(μS) | |
漏极电流: | 280(mA) | |
耗散功率: | 300(mW) |
dzsc/19/1085/19108554.jpg
General Description
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
Features
☆★High density cell design for low RDS(ON).
☆★Voltage controlled small signal switch.
☆★Rugged and reliable.
☆★High saturation current capability.
FEATURES• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Fast Switching• Ease of Paralleling• Simple Drive Requirements• Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220 contribute to its wideacceptance throughout the industry.AvailableRoHS*COMPLIANT"
FEATURESz Low Forward Voltage Dropz Guard Ring Construction for Transient Protectionz High Conductance -z Also Available in Lead Free Versiondzsc/19/1148/19114804.jpg"