供应三极管2SC945
| 价 格： | 60.00 | |
| 加工定制： | 是 | |
| 品牌/商标： | TXF | |
| 型号/规格： | 2SC945 | |
| 应用范围： | 放大 | |
| 材料： | 硅(Si) | |
| 极性： | NPN型 | |
| 击穿电压VCEO： | `（V） | |
| 集电极允许电流ICM： | `（A） | |
| 集电极耗散功率PCM： | `（W） | |
| 截止频率fT： | `（MHz） | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 塑料封装 |
2Sc945
厂家直销，价格优惠，质量保证，欢迎来电查询！
FEATURES
POWE DISSIPATION
PCM:0.4W(TAMB=25)
COLLECTO CU ENT
ICM:0.15A
V(BR)CBO:60V
OPE ATING AND STORAGE JUNCTION TEMPERATURE RANGE
TJ,TATG:-55 TO 150
2Sc945
厂家直销，价格优惠，质量保证，欢迎来电查询！
FEATURES
POWE DISSIPATION
PCM:0.4W(TAMB=25)
COLLECTO CU ENT
ICM:0.15A
V(BR)CBO:60V
OPE ATING AND STORAGE JUNCTION TEMPERATURE RANGE
TJ,TATG:-55 TO 150
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供应三极管S9012
信息内容：S9012M TRANSISTORDESCRIPTIONPNP Epitaxial Silicon TransistorFEATURESComplementary to S9013MExcellent hFE linearityAPPLICATION150mW Output Amplifier of Potable Radios in ClassB Push-pull Operation.For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,DVD-ROM,Note book PC, etc.) MAXIMUM RATINGS TA=25℃ unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -5 VIC Collector Current -Continuous -500 mAPC Collector Dissipation 150 mWTJ Junction Temperature 150 ℃Tstg Storage Temperature -55-150 ℃ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -40 VCollector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 VEmitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 VCollector cut-off current ICBO VCB=-40 V ,IE=0 -0.1 μACollector cut-off current ICEO VCE=-20V...
TO-252.FQD2N60B/C
信息内容：FQD2N60C / FQU2N60C600V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology. Features• 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V• Low gate charge ( typical 8.5 nC)• Low Crss ( typical 4.3 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
