供应三极管S9012
| 价 格： | 0.04 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | TXF | |
| 型号/规格： | S9012 | |
| 应用范围： | 放大 | |
| 材料： | 硅(Si) | |
| 极性： | NPN型 | |
| 集电极允许电流ICM： | 0.5（A） | |
| 集电极耗散功率PCM： | 0.04（W） | |
| 结构： | 平面型 | |
| 封装形式： | TO-92 | |
| 封装材料： | 塑料封装 |
S9012M TRANSISTOR
DESCRIPTION
PNP Epitaxial Silicon Transistor
FEATURES
Complementary to S9013M
Excellent hFE linearity
APPLICATION
150mW Output Amplifier of Potable Radios in Class
B Push-pull Operation.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Dissipation 150 mW
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V
Collector cut-off current ICBO VCB=-40 V ,IE=0 -0.1 μA
Collector cut-off current ICEO VCE=-20V ,IB=0 -0.1 μA
Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μA
DC current gain hFE VCE=-1V, IC=-50mA 120 400
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V
Transition frequency fT
VCE=-6V, IC= -20mA
f=30MHz
150 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 5 pF
- 所属城市：广东 深圳
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- 联系人： 许惠谦
- 电话：0755-82533222
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TO-252.FQD2N60B/C
信息内容：FQD2N60C / FQU2N60C600V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology. Features• 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V• Low gate charge ( typical 8.5 nC)• Low Crss ( typical 4.3 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
