价 格: | 7.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | iscsemi | |
型号/规格: | BU926 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
击穿电压VCBO: | 400(V) | |
集电极允许电流ICM: | 8(A) | |
集电极耗散功率PCM: | 120(W) | |
截止频率fT: | 4(MHz) | |
结构: | 平面型 | |
封装形式: | TO-3PN | |
封装材料: | 塑料封装 |
iscSilicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·Low Saturation Voltage
: VCE(sat)= 1.5V (Max)@IC= 5A
APPLICATIONS
·Designed for use in high-voltage , high-speed , power
switching in inductive circuit.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Base-Emitter Voltage | 850 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current- Continuous | 8 | A |
ICM | Collector Current-Peak | 10 | A |
IB | Base Current- Continuous | 2 | A |
PC | Collector Power Dissipation @ TC=25℃ | 120 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -65~150 | ℃ |
DESCRIPTION ··Collector-Base Breakdown Voltage-:V(BR)CBO= 500V(Min.)·Low Collector Saturation Voltage·Wide Area of Safe Operation·High Speed Switching APPLICATIONS·Designed for high speed switching applications. Absolute maximum ratings (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage500VVCESCollector-Emitter Voltage500VVCEOCollector-Emitter Voltage400VVEBOEmitter-Base Voltage7VICCollector Current-Continuous12AICMCollector Current-Peak22AIBBase Current-Continuous5APCCollector Power Dissipation@Ta=25℃3WCollector Power Dissipation@TC=25℃100TjJunction Temperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 10mA; IB= 0400 VVCE(sat)Collector-Emitter Saturation VoltageIC= 7A; IB= 1.4A 1.0VVBE(sat)Base-Emitter Saturation VoltageIC= 7A; IB= 1.4A 1...
DESCRIPTION ·High Current Capability·Good Linearity of hFE·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min.)·Complement to Type 2SC2431 APPLICATIONS·Designed for high speed, high voltage switching systems. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-120VVCEOCollector-Emitter Voltage-120VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -15AIBBase Current-Continuous -5APCCollector Power Dissipation@TC=25℃100WTjJunction Temperature175℃TstgStorage Temperature-65~175℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -10mA; RBE=∞-120 VV(BR)CBOCollector-Base Breakdown VoltageIC= -50μA; IE= 0-120 VV(BR)EBOEmitter-Base Breakdown VoltageIE= -1mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -7A; IB= -0.7A -1.5VVBE(sat)Base-Emitter Saturation VoltageIC= -7A; IB...