价 格: | 9.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SC3873 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION ·
·Collector-Base Breakdown Voltage-
:V(BR)CBO= 500V(Min.)
·Low Collector Saturation Voltage
·Wide Area of Safe Operation
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCES | Collector-Emitter Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 12 | A |
ICM | Collector Current-Peak | 22 | A |
IB | Base Current-Continuous | 5 | A |
PC | Collector Power Dissipation @Ta=25℃ | 3 | W |
Collector Power Dissipation @TC=25℃ | 100 | ||
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA; IB= 0 | 400 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 7A; IB= 1.4A |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 7A; IB= 1.4A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 100 | μA |
hFE-1 | DC Current Gain | IC= 0.1A; VCE= 5V | 15 |
|
|
|
hFE-2 | DC Current Gain | IC= 7A; VCE= 5V | 8 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.5A; VCE= 10V |
| 30 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | IC= 7A; IB1= 1.4A; IB2= -2.8A; VCC= 150V |
|
| 0.7 | μs |
ts | Storage Time |
|
| 2.0 | μs | |
tf | Fall Time |
|
| 0.3 | μs |
"
DESCRIPTION ·High Current Capability·Good Linearity of hFE·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min.)·Complement to Type 2SC2431 APPLICATIONS·Designed for high speed, high voltage switching systems. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-120VVCEOCollector-Emitter Voltage-120VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -15AIBBase Current-Continuous -5APCCollector Power Dissipation@TC=25℃100WTjJunction Temperature175℃TstgStorage Temperature-65~175℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -10mA; RBE=∞-120 VV(BR)CBOCollector-Base Breakdown VoltageIC= -50μA; IE= 0-120 VV(BR)EBOEmitter-Base Breakdown VoltageIE= -1mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -7A; IB= -0.7A -1.5VVBE(sat)Base-Emitter Saturation VoltageIC= -7A; IB...
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