- 所属城市：江苏 无锡
- [联系时请说明来自维库仪器仪表网]
- 联系人： 王燕
- 电话：0510-85346980
- 传真：0510-85346750
- 手机：15961889150
- QQ ：
无锡固电供应iscsemi品牌BU926三极管
信息内容：iscSilicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)·Low Saturation Voltage : VCE(sat)= 1.5V (Max)@IC= 5A APPLICATIONS·Designed for use in high-voltage , high-speed , power switching in inductive circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOBase-Emitter Voltage 850VVCEOCollector-Emitter Voltage 400VVEBOEmitter-Base Voltage7VICCollector Current- Continuous8AICMCollector Current-Peak 10AIBBase Current- Continuous2APCCollector Power Dissipation@ TC=25℃120WTJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃
无锡固电ISC供应2SC3873三极管
信息内容：DESCRIPTION ··Collector-Base Breakdown Voltage-:V(BR)CBO= 500V(Min.)·Low Collector Saturation Voltage·Wide Area of Safe Operation·High Speed Switching APPLICATIONS·Designed for high speed switching applications. Absolute maximum ratings (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage500VVCESCollector-Emitter Voltage500VVCEOCollector-Emitter Voltage400VVEBOEmitter-Base Voltage7VICCollector Current-Continuous12AICMCollector Current-Peak22AIBBase Current-Continuous5APCCollector Power Dissipation@Ta=25℃3WCollector Power Dissipation@TC=25℃100TjJunction Temperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 10mA; IB= 0400 VVCE(sat)Collector-Emitter Saturation VoltageIC= 7A; IB= 1.4A 1.0VVBE(sat)Base-Emitter Saturation VoltageIC= 7A; IB= 1.4A 1...
