价 格: | 面议 | |
品牌/商标: | MagnaChip(美格纳半导体) | |
型号/规格: | MDF18N50TH | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | CER-DIP/陶瓷直插 | |
开启电压: | 5(V) | |
跨导: | 13000(μS) | |
极间电容: | 2430(pF) | |
漏极电流: | 18000(mA) | |
耗散功率: | 37000(mW) |
N-Channel MOSFET 500V, 18 A, 0.27Ω
适用于:电源,PFC,高电流高速开关
•封装类型:TO-220F
•VDS=500V
•VDS= 550V @ Tjmax
•ID= 18.0A @ VGS = 10V
•RDS(ON)≤ 0.27Ω @ VGS = 10V
•耗散功率:37W
•工作温度范围:-55 ~ 150°C
"
•工作温度范围:−65 to 175°CFeatures and Benefits• Low Forward Voltage• Low Power Loss/High Efficiency• High Surge Capacity• 175°C Operating Junction Temperature• 20 A Total (10 A Per Diode Leg)• Pb−Free Package is Available
650V N-Channel MOSFET适合于:高效率开关电源、有源功率因数校正、电子灯镇流器Features7A, 650V, RDS(on) = 1.4Ω @VGS = 10 VLow gate charge ( typical 28 nC)Low Crss ( typical 12 pF)Fast switching100% avalanche testedImproved dv/dt capability开启延迟时间:20ns关断延迟时间:90ns