价 格: | 3.05 | |
是否提供加工定制: | 否 | |
产品类型: | 功率二极管 | |
是否进口: | 是 | |
品牌/商标: | 0N/安森美 | |
型号/规格: | MBR20200CTG | |
主要参数: | 20A;200V | |
用途: | 输出整流 | |
备注: | 无铅封装 |
•工作温度范围:−65 to 175°C
Features and Benefits
• Low Forward Voltage
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• Pb−Free Package is Available
650V N-Channel MOSFET适合于:高效率开关电源、有源功率因数校正、电子灯镇流器Features7A, 650V, RDS(on) = 1.4Ω @VGS = 10 VLow gate charge ( typical 28 nC)Low Crss ( typical 12 pF)Fast switching100% avalanche testedImproved dv/dt capability开启延迟时间:20ns关断延迟时间:90ns
•导通电阻:RDS(on) = 0.032Ω •封装形式:TO-220AB