品牌/商标 | FAIRCHILD | 型号/规格 | FDD6682 |
种类 | 绝缘栅(MOSFET) | 沟道类型 | N沟道 |
导电方式 | 耗尽型 | 用途 | S/开关 |
封装外形 | SMD(SO)/表面封装 | 材料 | N-FET硅N沟道 |
开启电压 | 20V(V) | 夹断电压 | 30V(V) |
漏极电流 | 46A(mA) | 耗散功率 | 46W(mW) |
本公司经营世界名厂(IR ST FAIRCHILD VISHAY ZETEX infineon):二三极管 场效应管 精密稳压IC;欢迎来电咨询:0755-83687190 82567830 只做现货
FDD120AN15AO | FAIRCHILD | 09+ | TO-252 |
FDD5612 | FAIRCHILD | 09+ | TO-252 |
FDD5614 | FAIRCHILD | 09+ | TO-252 |
FDD5614P | FAIRCHILD | 09+ | TO-252 |
FDD5614P | FAIRCHILD | 09+ | TO-252 |
FDD5670 | FAIRCHILD | 09+ | TO-252 |
FDD6030 | FAIRCHILD | 09+ | TO-252 |
FDD6030L | FAIRCHILD | 09+ | TO-252 |
FDD6035 | FAIRCHILD | 09+ | TO-252 |
FDD6296 | FAIRCHILD | 09+ | TO-252 |
FDD6612 | FAIRCHILD | 09+ | TO-252 |
FDD6670 | FAIRCHILD | 09+ | TO-252 |
FDD6676 | FAIRCHILD | 09+ | TO-252 |
FDD6676 | FAIRCHILD | 09+ | TO-252 |
FDD6676 | FAIRCHILD | 09+ | TO-252 |
FDD6680 | FAIRCHILD | 09+ | TO-252 |
FDD6682 | FAIRCHILD | 09+ | TO-252 |
FDD6685 | FAIRCHILD | 09+ | TO-252 |
FDD6688 | FAIRCHILD | 09+ | TO-252 |
FDD6690 | FAIRCHILD | 09+ | TO-252 |
FDD6692 | FAIRCHILD | 09+ | TO-252 |
FDD6696 | FAIRCHILD | 09+ | TO-252 |
FDD7030 | FAIRCHILD | 09+ | TO-252 |
FDD7030BL | FAIRCHILD | 09+ | TO-252 |
FDD8770 | FAIRCHILD | 09+ | TO-252 |
FDD8778 | FAIRCHILD | 09+ | TO-252 |
FDD8782 | FAIRCHILD | 09+ | TO-252 |
FDD8796 | FAIRCHILD | 09+ | TO-252 |
FDD8870 | FAIRCHILD | 09+ | TO-252 |
FDD8874 | FAIRCHILD | 09+ | TO-252 |
FDD8876 | FAIRCHILD | 09+ | TO-252 |
FDD8878 | FAIRCHILD | 09+ | TO-252 |
FDD8880 | FAIRCHILD | 09+ | TO-252 |
FDD8882 | FAIRCHILD | 09+ | TO-252 |
FDD8896 | FAIRCHILD | 09+ | TO-252 |
品牌/商标 FAIRCHILD 型号/规格 FDD5670 种类 绝缘栅(MOSFET) 沟道类型 N沟道 导电方式 耗尽型 用途 S/开关 封装外形 SMD(SO)/表面封装 材料 N-FET硅N沟道 开启电压 20V(V) 夹断电压 60V(V) 跨导 1(μS) 极间电容 1(pF) 低频噪声系数 1(dB) 漏极电流 1(mA) 耗散功率 1(mW) 特价供应FDD120AN15AOFAIRCHILD07+TO-252FDD5612FAIRCHILD05+TO-252FDD5614FAIRCHILD04+TO-252FDD5614PFAIRCHILD05+TO-252FDD5614PFAIRCHILD04+TO-252FDD5670FAIRCHILD05+TO-252FDD6030FAIRCHILD05+TO-252...
品牌/商标 ZETEX 型号/规格 ZVN2110GTA 种类 绝缘栅(MOSFET) 沟道类型 N沟道 导电方式 耗尽型 用途 S/开关 封装外形 SMD(SO)/表面封装 材料 N-FET硅N沟道 开启电压 100V(V) 夹断电压 20V(V) 跨导 1(μS) 极间电容 1(pF) 低频噪声系数 1(dB) 漏极电流 6A(mA) 耗散功率 2W(mW)