价 格: | 4.50 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SC4385 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1670
APPLICATIONS
·Designed for audio and general purpose applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 120 | V |
VCEO | Collector-Emitter Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 6 | A |
IB | Base Current-Continuous | 3 | A |
PC | Collector Power Dissipation @ TC=25℃ | 60 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA; IB= 0 | 80 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 2A; IB= 0.2A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 120V; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
|
| 10 | μA |
hFE | DC Current Gain | IC= 2A; VCE= 4V | 50 |
|
| |
fT | Current-Gain—Bandwidth Product | IE= -0.5A; VCE= 12V |
| 20 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= 3A, RL= 10Ω, IB1= -IB2= 0.3A, VCC=30V |
| 0.5 |
| μs |
tstg | Storage Time |
| 2.5 |
| μs | |
tf | Fall Time |
| 0.6 |
| μs |
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -150V(Min.)·Good Linearity of hFE·WideArea of Safe Operation·Complement to Type 2SC2488 APPLICATIONS·Designed for AF amplifier, high power amplifier applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-150VVCEOCollector-Emitter Voltage-150VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -8AICMCollector Current-Peak -12APCCollector Power Dissipation@TC=25℃100WTjJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -100mA; IB= 0-150 VVCE(sat)Collector-Emitter Saturation VoltageIC= -8A; IB= -0.8A -2.0VVBE(on)Base-Emitter On VoltageIC= -8A; VCE= -5V -2.5VICBOCollector Cutoff CurrentVCB= -70V; IE= 0 -1mAIEBOEmitter Cutoff CurrentVEB= -5V; IC= 0 -2mAhFE-1DC Current Gai...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)·High Switching Speed APPLICATIONS·Designed for switching regulator and general purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage500VVCEOCollector-Emitter Voltage400VVEBOEmitter-Base Voltage10VICCollector Current-Continuous 15AICMCollector Current-Peak 30AIBBase Current-Continuous 5APCCollector Power Dissipation@TC=25℃80WTJJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 25mA; IB= 0400 VVCE(sat)Collector-Emitter Saturation VoltageIC= 8A; IB= 1.6A 0.5VVBE(sat)Base-Emitter Saturation VoltageIC= 8A; IB= 1.6A 1.3VICBOCollector Cutoff CurrentVCB= 500V; IE= 0 100μAIEBOEmitter Cutoff CurrentVEB= 10V; IC= 0 100μAhFEDC Current GainIC= 8...