价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA1064 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Good Linearity of hFE
·WideArea of Safe Operation
·Complement to Type 2SC2488
APPLICATIONS
·Designed for AF amplifier, high power amplifier applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -150 | V |
VCEO | Collector-Emitter Voltage | -150 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -8 | A |
ICM | Collector Current-Peak | -12 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -100mA; IB= 0 | -150 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -8A; IB= -0.8A |
|
| -2.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -8A; VCE= -5V |
|
| -2.5 | V |
ICBO | Collector Cutoff Current | VCB= -70V; IE= 0 |
|
| -1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -2 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -5V | 40 |
| 280 |
|
hFE-2 | DC Current Gain | IC= -8A; VCE= -5V | 20 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -10V |
| 50 |
| MHz |
u hFE-2Classifications
R | Q | P | O |
40-80 | 60-120 | 90-180 | 140-280 |
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 400V(Min)·High Switching Speed APPLICATIONS·Designed for switching regulator and general purposeapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage500VVCEOCollector-Emitter Voltage400VVEBOEmitter-Base Voltage10VICCollector Current-Continuous 15AICMCollector Current-Peak 30AIBBase Current-Continuous 5APCCollector Power Dissipation@TC=25℃80WTJJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 25mA; IB= 0400 VVCE(sat)Collector-Emitter Saturation VoltageIC= 8A; IB= 1.6A 0.5VVBE(sat)Base-Emitter Saturation VoltageIC= 8A; IB= 1.6A 1.3VICBOCollector Cutoff CurrentVCB= 500V; IE= 0 100μAIEBOEmitter Cutoff CurrentVEB= 10V; IC= 0 100μAhFEDC Current GainIC= 8...
iscSilicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- MJE4340 = 120V(Min)- MJE4341= 140V(Min)- MJE4342= 160V(Min)- MJE4343·Low Saturation Voltage·Complement to Type MJE4350/4351/4352/4353 APPLICATIONS·Designed for use in high power audio amplifier applicationsand high voltage switching regulator circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector- BaseVoltage MJE4340100VMJE4341120MJE4342140MJE4343160VCEOCollector-EmitterVoltageMJE4340100VMJE4341120MJE4342140MJE4343160VEBOEmitter-Base Voltage7VICCollector Current-Continuous16AICMCollector Current-Peak 20AIBBase Current-Continuous 5APCCollector Power Dissipation@ TC=25℃125WTJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃