价 格: | 9.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SC4298 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 10 | V |
IC | Collector Current-Continuous | 15 | A |
ICM | Collector Current-Peak | 30 | A |
IB | Base Current-Continuous | 5 | A |
PC | Collector Power Dissipation @TC=25℃ | 80 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 25mA; IB= 0 | 400 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 8A; IB= 1.6A |
|
| 0.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 8A; IB= 1.6A |
|
| 1.3 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 10V; IC= 0 |
|
| 100 | μA |
hFE | DC Current Gain | IC= 8A; VCE= 4V | 10 |
| 30 |
|
COB | Output Capacitance | IE= 0; VCB= 10V; f= 1MHz |
| 85 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= -1.5A; VCE= 12V |
| 10 |
| MHz |
Switching Times | ||||||
ton | Turn-On Time | IC= 8A; IB1= 0.8A; IB2= -1.6A; VCC= 200V; RL= 25Ω |
|
| 1.0 | μs |
tstg | Storage Time |
|
| 3.0 | μs | |
tf | Fall Time |
|
| 0.5 | μs |
iscSilicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- MJE4340 = 120V(Min)- MJE4341= 140V(Min)- MJE4342= 160V(Min)- MJE4343·Low Saturation Voltage·Complement to Type MJE4350/4351/4352/4353 APPLICATIONS·Designed for use in high power audio amplifier applicationsand high voltage switching regulator circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector- BaseVoltage MJE4340100VMJE4341120MJE4342140MJE4343160VCEOCollector-EmitterVoltageMJE4340100VMJE4341120MJE4342140MJE4343160VEBOEmitter-Base Voltage7VICCollector Current-Continuous16AICMCollector Current-Peak 20AIBBase Current-Continuous 5APCCollector Power Dissipation@ TC=25℃125WTJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃
DESCRIPTION ·DC Current Gain-: hFE= 15-150@IC= -1.5A·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min)·Complement to Type 2N6474 APPLICATIONS·Designed for general-purpose amplifier and switchingapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage -130VVCERCollector-Emitter Voltage RBE= 100Ω-130VVCEOCollector-Emitter Voltage -120VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-4AIBBase Current-2APDCollector Power Dissipation@ TC=25℃40WTJJunctionTemperature150℃TstgStorageTemperature Range-65~150℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance, Junction to Case3.125℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINMAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -100mA; IB= 0-120 VVCERCollector-Emitter Sustaining VoltageIC= -100mA;...