无锡固电ISC 供应2SB993三极管
| 价 格： | 3.00 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC | |
| 型号/规格： | 2SB993 | |
| 应用范围： | 放大 | |
| 材料： | 硅(Si) | |
| 极性： | PNP型 | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
·Collector Power Dissipation-
: PC=40W@ TC= 25℃
·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@ IC= -4A
·Complement to Type 2SD1363
APPLICATIONS
·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -70 | V |
VCEO | Collector-Emitter Voltage | -50 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -7 | A |
IB | Base Current-Continuous | -1 | A |
PC | Collector Power Dissipation @Ta=25℃ | 1.5 | W |
Collector Power Dissipation @TC=25℃ | 40 | ||
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; IB= 0 | -50 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -0.4 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -1.2 | V |
ICBO | Collector Cutoff Current | VCB= -70V; IE= 0 |
|
| -30 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -50 | μA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -1V | 70 |
| 240 |
|
hFE-2 | DC Current Gain | IC= -4A; VCE= -1V | 30 |
|
|
|
COB | Output Capacitance | IE= 0; VCB= -10V; ftest= 1MHz |
| 250 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -4V |
| 10 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | VCC=-30V, RL= 10Ω, IB1= -IB2= -0.3A, |
| 0.2 |
| μs |
tstg | Storage Time |
| 2.5 |
| μs | |
tf | Fall Time |
| 0.5 |
| μs | |
u hFE-1Classifications
O | Y |
70-140 | 120-240 |
- 所属城市：江苏 无锡
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- 联系人： 王燕
- 电话：0510-85346980
- 传真：0510-85346750
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供应BUY79三极管
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无锡固电ISC 供应三极管2SA1068
信息内容：DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -150V(Min.)·Good Linearity of hFE·WideArea of Safe Operation APPLICATIONS·Designed for AF amplifier, high power amplifier applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-150VVCEOCollector-Emitter Voltage-150VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -10AICMCollector Current-Peak -15APCCollector Power Dissipation@TC=25℃100WTjJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -100mA; IB= 0-150 VVCE(sat)Collector-Emitter Saturation VoltageIC= -5A; IB= -0.5A -2.0VVBE(sat)Base-Emitter Saturation VoltageIC= -5A; IB= -0.5A -2.5VICBOCollector Cutoff CurrentVCB= -150V; IE= 0 -0.1mAIEBOEmitter Cutoff CurrentVEB= -5V; IC= 0 -0.1mAhFEDC Current GainIC= -3A; VCE= -4V30...
