价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA1068 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Good Linearity of hFE
·WideArea of Safe Operation
APPLICATIONS
·Designed for AF amplifier, high power amplifier applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -150 | V |
VCEO | Collector-Emitter Voltage | -150 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -10 | A |
ICM | Collector Current-Peak | -15 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -100mA; IB= 0 | -150 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -2.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -2.5 | V |
ICBO | Collector Cutoff Current | VCB= -150V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -0.1 | mA |
hFE | DC Current Gain | IC= -3A; VCE= -4V | 30 |
| 200 |
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -10V |
| 50 |
| MHz |
供应2SB772三极管 TO-126有意者联系!DESCRIPTION ·High Collector Current -IC= -3A·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min)·Good Linearity of hFE·LowSaturation Voltage·Complement to Type 2SD882 APPLICATIONS·Designed for use in the output stage of 3 watts audio amp-lifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage -40VVCEOCollector-Emitter Voltage -30VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-3AICPCollector Current-Pulse-7APCCollector Power Dissipation@ TC=25℃10WCollector Power Dissipation@ Ta=25℃1TJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCE(sat)Collector-Emitter Saturation VoltageIC= -2A; IB= -0.2A -0.5...
Features ·With TO-126P package·Designed for use in general purpose bidirectional switching and phasecontrol applications , which are intended to be interfaced directly tomicrocontrollers , logic integrated circuits and other low power gate trigger circuits.ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERMINUNITVDRMRepetitive peak off-state voltage600VVRRMRepetitive peak off-state voltage600VIT(RMS)RMS on-state current (full sine wave)4AITSMNon-repetitive peak on-state current25APGMPeak gate power dissipation5WPG(AV)Average gate power dissipation0.5WTjOperating junction temperature110℃TstgStorage temperature-45~150℃ ELECTRICAL CHARACTERISTICS (TC=25℃unless otherwise specified)SYMBOLPARAMETERCONDITIONSMINMAXUNITIRRMRepetitive peak reverse current VR=VRRM,VR=VRRM, Tj=110℃ 0.010.2mAIDRMRepetitive peak off-state currentVD=VDRM,VD=VDRM, Tj=110℃ 0.010.2mAIGTGate trigger currentⅠVD=12V; IT= 0.1A, RL= 30Ω 10mAⅡ10Ⅲ10...