价 格: | 0.70 | |
是否提供加工定制: | 是 | |
品牌/商标: | isc/iscsemi | |
型号/规格: | 2SB772 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
集电极允许电流ICM: | -3(A) | |
集电极耗散功率PCM: | 10(W) | |
截止频率fT: | 80(MHz) | |
结构: | 平面型 | |
封装形式: | TO-126 |
供应2SB772三极管 TO-126有意者联系!
DESCRIPTION
·High Collector Current -IC= -3A
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -30V(Min)
·Good Linearity of hFE
·LowSaturation Voltage
·Complement to Type 2SD882
APPLICATIONS
·Designed for use in the output stage of 3 watts audio amp-
lifier, voltage regulator, DC-DC converter and relay driver.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -40 | V |
VCEO | Collector-Emitter Voltage | -30 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -3 | A |
ICP | Collector Current-Pulse | -7 | A |
PC | Collector Power Dissipation @ TC=25℃ | 10 | W |
Collector Power Dissipation @ Ta=25℃ | 1 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -2A; IB= -0.2A |
|
| -0.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -2A; IB= -0.2A |
|
| -2.0 | V |
ICBO | Collector Cutoff Current | VCB= -30V; IE= 0 |
|
| -1.0 | μA |
IEBO | Emitter Cutoff Current | VEB= -3V; IC= 0 |
|
| -1.0 | μA |
hFE-1 | DC Current Gain | IC= -20mA ; VCE= -2V | 30 |
|
|
|
hFE-2 | DC Current Gain | IC= -1A ; VCE= -2V | 60 |
| 400 |
|
fT | Current-Gain—Bandwidth Product | IC= -0.1A ; VCE= -5V |
| 80 |
| MHz |
COB | Output Capacitance | IE=0; VCB= -10V, ftest= 1MHz |
| 55 |
| pF |
u hFE-2Classifications
R | Q | P | E |
60-120 | 100-200 | 160-320 | 200-400 |
Features ·With TO-126P package·Designed for use in general purpose bidirectional switching and phasecontrol applications , which are intended to be interfaced directly tomicrocontrollers , logic integrated circuits and other low power gate trigger circuits.ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERMINUNITVDRMRepetitive peak off-state voltage600VVRRMRepetitive peak off-state voltage600VIT(RMS)RMS on-state current (full sine wave)4AITSMNon-repetitive peak on-state current25APGMPeak gate power dissipation5WPG(AV)Average gate power dissipation0.5WTjOperating junction temperature110℃TstgStorage temperature-45~150℃ ELECTRICAL CHARACTERISTICS (TC=25℃unless otherwise specified)SYMBOLPARAMETERCONDITIONSMINMAXUNITIRRMRepetitive peak reverse current VR=VRRM,VR=VRRM, Tj=110℃ 0.010.2mAIDRMRepetitive peak off-state currentVD=VDRM,VD=VDRM, Tj=110℃ 0.010.2mAIGTGate trigger currentⅠVD=12V; IT= 0.1A, RL= 30Ω 10mAⅡ10Ⅲ10...
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 800V(Min.)·High Switching Speed APPLICATIONS·High voltage switching applications·Switching regulator applications·High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 850VVCEOCollector-Emitter Voltage 800VVEBOEmitter-Base Voltage7VICCollector Current-Continuous2AICMCollector Current-Peak4AIBBase Current-Continuous1APCCollector Power Dissipation@ TC=25℃80WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= 10mA; IB= 0800 VV(BR)CBOCollector-BaseBreakdownVoltage IC= 1mA; IE= 0850 VVCE(sat)Collector-Emitter Saturation VoltageIC= 0.5A; IB= 50mA 1.0VVBE(...