价 格: | 0.20 | |
品牌/商标: | VISHAY/ST/长电 | |
型号/规格: | 2N2907 | |
应用范围: | 开关 | |
功率特性: | 中功率 | |
频率特性: | 中频 | |
极性: | PNP型 | |
结构: | 点接触型 | |
材料: | 硅(Si) | |
封装形式: | TO-92 | |
封装材料: | 树脂封装 | |
截止频率fT: | 100(MHz) | |
集电极允许电流ICM: | 2(A) | |
集电极耗散功率PCM: | 80(W) | |
营销方式: | 现货 | |
产品性质: | 热销 |
特价现货供应 开关三极管2N2907dzsc/19/0050/19005075.jpg
General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 800 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to 150 °C
Symbol Characteristic Max Units
PN2907 *MMBT2907
PD Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RqJC Thermal Resistance, Junction to Case 83.3 °C/W
RqJA Thermal Resistance, Junction to Ambient 200 357 °C/
dzsc/19/0070/19007018.jpg特价现货供应 开关三极管PXT8050DJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-89 Plastic-Encapsulate TransistorsPXT8050 TRANSISTOR (NPN)FEATURESz Compliment to PXT8550MARKING: Y1MAXIMUM RATINGS (TA=25℃ unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 6 VIC Collector Current -Continuous 1.5 APC Collector Power dissipation 0.5 WTJ Junction Temperature 150 ℃Tstg Storage Temperature -55-150 ℃ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 VCollector cut-off current ICBO VCB=40V, IE=0 0.1 μAEmitter cut-off current ICEO VCE=20V, IE=0 0.1 μAEmitter cut-off current IEBO VEB=5V, IC=0 0.1 μAhFE(1) VCE=1V, IC=...
dzsc/19/0089/19008939.jpg1SS2261 2007-11-01TOSHIBA Diode Silicon Epitaxial Planar Type1SS226Ultra High Speed Switching Applicationz Small package : SC-59z Low forward voltage : VF (3) = 0.9V (typ.)z Fast reverse recovery time : trr = 1.6ns (typ.)z Small total capacitance : CT = 0.9pF (typ.)Absolute Maximum Ratings (Ta = 25°C)Characteristic Symbol Rating UnitMaximum (peak) reverse voltage VRM 85 VReverse voltage VR 80 VMaximum (peak) forward current IFM 300 (*) mAAverage forward current IO 100 (*) mASurge current (10ms) IFSM 2 (*) APower dissipation P 150 mWJunction temperature Tj 125 °CStorage temperature range Tstg −55~125 °CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operatingconditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Pleas...