特价现货供应 二极管1SS226
| 价 格： | 0.01 | |
| 产品类型： | 快恢复二极管 | |
| 品牌/商标： | TOSHIBA/长电 | |
| 型号/规格： | 1SS226 | |
| 结构： | 平面型 | |
| 材料： | 硅(Si) | |
| 封装形式： | STO-23 | |
| 封装材料： | 塑料封装 | |
| 功率特性： | 中功率 | |
| 频率特性： | 中频 | |
| 发光颜色： | 电压控制 | |
| LED封装： | 无色透明(T) | |
| 出光面特征： | 圆灯 | |
| 发光强度角分布： | 标准型 | |
| 反向电压VR： | 2（V） | |
| 正向直流电流IF： | 100（mA） |
dzsc/19/0089/19008939.jpg
1SS226
1 2007-11-01
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS226
Ultra High Speed Switching Application
z Small package : SC-59
z Low forward voltage : VF (3) = 0.9V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 0.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300 (*) mA
Average forward current IO 100 (*) mA
Surge current (10ms) IFSM 2 (*) A
Power dissipation P 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = Unit rating × 0.7.
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) ― IF = 1mA ― 0.60 ―
Forward voltage VF (2) ― IF = 10mA ― 0.72 ―
VF (3) ― IF = 100mA ― 0.90 1.20
V
IR (1) ― VR = 30V ― ― 0.1
Reverse current
IR (2) ― VR = 80V ― ― 0.5
μA
Total capacitance CT ― VR = 0, f = 1MHz ― 0.9 3.0 pF
Reverse recovery time trr ― IF = 10mA (Fig.1) ― 1.6 4.0 ns
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