特价现货供应 开关三极管PXT8050D
| 价 格： | 0.20 | |
| 品牌/商标： | 长电 | |
| 型号/规格： | PXT8050D | |
| 应用范围： | 放大 | |
| 功率特性： | 中功率 | |
| 频率特性： | 中频 | |
| 极性： | NPN型 | |
| 结构： | 点接触型 | |
| 材料： | 硅(Si) | |
| 封装形式： | SOT-89 | |
| 封装材料： | 树脂封装 | |
| 截止频率fT： | 100（MHz） | |
| 集电极允许电流ICM： | 1.5（A） | |
| 集电极耗散功率PCM： | 0.5（W） | |
| 营销方式： | 现货 | |
| 产品性质： | 热销 |
dzsc/19/0070/19007018.jpg
特价现货供应 开关三极管PXT8050D
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
PXT8050 TRANSISTOR (NPN)
FEATURES
z Compliment to PXT8550
MARKING: Y1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 1.5 A
PC Collector Power dissipation 0.5 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 μA
Emitter cut-off current ICEO VCE=20V, IE=0 0.1 μA
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA
hFE(1) VCE=1V, IC=100mA 85 400
DC current gain
hFE(2) VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V
Base-emitter voltage VBE VCE=1V, IC=10mA 1 V
Base-emitter positive favor voltage VBEF IB=1A 1.55 V
Transition frequency fT VCE=10V,IC=50mA,f=30MHz 100 MHz
output capacitance Cob VCB=10V,IE=0,f=1MHz 15 pF
CLASSIFICATION OF hFE(1)
Rank B C D D3
Range 85-160 120-200 160-300 300-400
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