价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SB531 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
·High Power Dissipation-
: PC= 50W(Max)@TC=25℃
·Complement to Type 2SD371
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -6 | A |
IE | Emitter Current-Continuous | 6 | A |
PC | Collector Power Dissipation @TC=25℃ | 50 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -0.1A; IB= 0 | -100 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -10mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -4A; IB= -0.4A |
|
| -2.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -4A; VCE= -5V |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -60V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -0.1 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -5V | 40 |
| 240 |
|
hFE-2 | DC Current Gain | IC= -4A; VCE= -5V | 20 |
|
|
|
COB | Output Capacitance | IE= 0; VCB= -10V; f= 1MHz |
| 180 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -5V |
| 8 |
| MHz |
u hFEClassifications
R | O | Y |
40-80 | 70-140 | 120-240 |
"
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min)·Collector Power Dissipation-: PC=40W@ TC= 25℃·Low Collector Saturation Voltage-: VCE(sat)= -0.4V(Max)@ IC= -4A·Complement to Type 2SD1363 APPLICATIONS·High current switching applications.·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-70VVCEOCollector-Emitter Voltage-50VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -7AIBBase Current-Continuous -1APCCollector Power Dissipation@Ta=25℃1.5WCollector Power Dissipation@TC=25℃40TJJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA; IB= 0-50 VVCE(sat)Collector-Emitter Saturation VoltageIC= -4A; IB= -0.4A -0.4VVBE(sat)Base-Emitter Saturation Volt...
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