价 格: | 0.02 | |
品牌: | ROHM/罗姆 | |
型号: | 2SC4081 sot-323 | |
应用范围: | 高反压 | |
功率特性: | 中功率 | |
频率特性: | 中频 | |
极性: | NPN型 | |
结构: | 面接触型 | |
材料: | 硅(Si) | |
封装形式: | 贴片型 | |
封装材料: | 树脂封装 | |
截止频率fT: | 150(MHz) | |
集电极允许电流ICM: | 100m(A) | |
集电极耗散功率PCM: | 220m(W) | |
营销方式: | 现货 | |
产品性质: | 热销 |
dzsc/19/0049/19004965.jpg
特价现货供应 三极管2SC4081
品牌:ROHM
封装形式:SOT-323
引脚数量:3
温度范围:最小 0 °C | 0 °C
文件大小:84 KB
功能应用:50V, 0.15A general purpose transistor
"特价现货供应 开关三极管2N2907dzsc/19/0050/19005075.jpgGeneral Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25°C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 800 mATJ, Tstg Operating and Storage Junction Temperature Range -55 to 150 °CSymbol Characteristic Max UnitsPN2907 *MMBT2907PD Total Devic...
dzsc/19/0070/19007018.jpg特价现货供应 开关三极管PXT8050DJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-89 Plastic-Encapsulate TransistorsPXT8050 TRANSISTOR (NPN)FEATURESz Compliment to PXT8550MARKING: Y1MAXIMUM RATINGS (TA=25℃ unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 6 VIC Collector Current -Continuous 1.5 APC Collector Power dissipation 0.5 WTJ Junction Temperature 150 ℃Tstg Storage Temperature -55-150 ℃ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 VEmitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 VCollector cut-off current ICBO VCB=40V, IE=0 0.1 μAEmitter cut-off current ICEO VCE=20V, IE=0 0.1 μAEmitter cut-off current IEBO VEB=5V, IC=0 0.1 μAhFE(1) VCE=1V, IC=...