价 格: | 7.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SC4581 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min)
·Fast Switching speed
APPLICATIONS
·Designed for power switching applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 600 | V |
VCEO | Collector-Emitter Voltage | 450 | V |
VCEX | Collector-Emitter Voltage VEB= 5V | 600 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 10 | A |
ICM | Collector Current-Peak | 20 | A |
IB | Base Current-Continuous | 4 | A |
IBM | Base Current-Peak | 8 | A |
PT | Total Power Dissipation @ TC=25℃ | 65 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 1.92 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.2A; IB= 0 | 450 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 5A; IB= 1A |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 5A; IB= 1A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | At rated Voltage |
|
| 100 | μA |
ICEO | Collector Cutoff Current | At rated Voltage |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | At rated Voltage |
|
| 100 | μA |
hFE-1 | DC Current Gain | IC= 5A; VCE= 5V | 10 |
|
|
|
hFE-2 | DC Current Gain | IC= 1mA; VCE= 5V | 5 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 10V |
| 20 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= 5A, IB1= 1A; IB2= -2A; RL= 30Ω; VBB2= 4V |
|
| 0.5 | μs |
tstg | Storage Time |
|
| 2.0 | μs | |
tf | Fall Time |
|
| 0.2 | μs |
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min)·High Power Dissipation-: PC= 50W(Max)@TC=25℃·Complement to Type 2SD371 APPLICATIONS·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-100VVCEOCollector-Emitter Voltage-100VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-6AIEEmitter Current-Continuous6APCCollector Power Dissipation@TC=25℃50WTJJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -0.1A; IB= 0-100 VV(BR)EBOEmitter-BaseBreakdownVoltageIE= -10mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -4A; IB= -0.4A -2.0VVBE(on)Base-Emitter On VoltageIC= -4A; VCE= -5V -1.5VICBOCollector Cutoff CurrentVCB= -60V; IE= 0 -0.1mAIEBOEmitter Cu...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min)·Collector Power Dissipation-: PC=40W@ TC= 25℃·Low Collector Saturation Voltage-: VCE(sat)= -0.4V(Max)@ IC= -4A·Complement to Type 2SD1363 APPLICATIONS·High current switching applications.·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-70VVCEOCollector-Emitter Voltage-50VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -7AIBBase Current-Continuous -1APCCollector Power Dissipation@Ta=25℃1.5WCollector Power Dissipation@TC=25℃40TJJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA; IB= 0-50 VVCE(sat)Collector-Emitter Saturation VoltageIC= -4A; IB= -0.4A -0.4VVBE(sat)Base-Emitter Saturation Volt...