价 格: | 10.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SA981 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | PNP型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 金属封装 |
DESCRIPTION
·High Power Dissipation-
: PC= 80W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
·Complement to Type 2SC2261
APPLICATIONS
·Designed for general purpose applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -120 | V |
VCEO | Collector-Emitter Voltage | -120 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -8 | A |
IB | Base Current-Continuous | -3 | A |
PC | Collector Power Dissipation @TC=25℃ | 80 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA ;IB= 0 | -120 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -3A; IB= -0.3A |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -120V; IE= 0 |
|
| -1.0 | mA |
IEBO | Emitter Cutoff Current | VEB= -6V; IC= 0 |
|
| -1.0 | mA |
hFE | DC Current Gain | IC= -3A; VCE= -4V | 30 |
|
|
|
fT | Current-Gain—Bandwidth Product | IE= 0.5A; VCE= -12V |
| 20 |
| MHz |
Switching times | ||||||
tr | Rise Time | IC= -3A ,RL= 4Ω, VCC=-12V IB1= -0.2A; IB2= 0.1A |
| 0.85 |
| μs |
tstg | Storage Time |
| 2.0 |
| μs | |
tf | Fall Time |
| 0.3 |
| μs |
DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 450V(Min)·Fast Switching speed APPLICATIONS·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 600VVCEOCollector-Emitter Voltage 450VVCEXCollector-Emitter Voltage VEB= 5V 600VVEBOEmitter-Base Voltage7VICCollector Current-Continuous10AICMCollector Current-Peak20AIBBase Current-Continuous4AIBMBase Current-Peak8APTTotal Power Dissipation@ TC=25℃65WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance,Junction to Case1.92℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.2A; IB= 0450 VVCE(sat)Collector-Emitter Saturation VoltageIC= 5A; ...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min)·High Power Dissipation-: PC= 50W(Max)@TC=25℃·Complement to Type 2SD371 APPLICATIONS·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-100VVCEOCollector-Emitter Voltage-100VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous-6AIEEmitter Current-Continuous6APCCollector Power Dissipation@TC=25℃50WTJJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -0.1A; IB= 0-100 VV(BR)EBOEmitter-BaseBreakdownVoltageIE= -10mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -4A; IB= -0.4A -2.0VVBE(on)Base-Emitter On VoltageIC= -4A; VCE= -5V -1.5VICBOCollector Cutoff CurrentVCB= -60V; IE= 0 -0.1mAIEBOEmitter Cu...