价 格: | 22.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | BUS13A | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION ·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUS13
450V (Min)-BUS13A
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
SYMBOL | PARAMETER | MAX | UNIT | |
VCES | Collector- Emitter Voltage(VBE= 0) | BUS13 | 850 | V |
BUS13A | 1000 | |||
VCEO | Collector-Emitter Voltage | BUS13 | 400 | V |
BUS13A | 450 | |||
VEBO | Emitter-Base Voltage | 9 | V | |
IC | Collector Current-Continuous | 15 | A | |
ICM | Collector Current-Peak tp< 2ms | 30 | A | |
IB | Base Current-Continuous | 6 | A | |
IBM | Base Current-Peak tp< 2ms | 9 | A | |
PC | Collector Power Dissipation @TC=25℃ | 175 | W | |
Tj | Junction Temperature | 200 | ℃ | |
Tstg | StorageTemperature Range | -65~200 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance, Junction to Case | 1.0 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT | |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | BUS13 | IC= 0.1A ; IB= 0; L= 25mH | 400 |
| V | |
BUS13A | 450 | ||||||
VCE(sat) | Collector-Emitter Saturation Voltage | BUS13 | IC= 10A; IB= 2A |
|
| 1.5 | V |
BUS13A | IC= 8A; IB= 1.6A | 1.5 | |||||
VBE(sat) | Base-Emitter Saturation Voltage | BUS13 | IC= 10A; IB= 2A |
|
| 1.6 | V |
BUS13A | IC= 8A; IB= 1.6A | 1.6 | |||||
ICES | Collector Cutoff Current | VCE=VCESMmax; VBE= 0 VCE= VCESMmax;VBE= 0;TJ= 125℃ |
|
| 1 4 | mA | |
IEBO | Emitter Cutoff Current | VEB= 9V; IC= 0 |
|
| 10 | mA | |
hFE | DC Current Gain | IC= 1.5A ; VCE= 5V | 15 |
| 50 |
| |
Switching Times, Resistive Load | |||||||
ton | Turn-On Time | For BUS13 IC= 10A ;IB1= -IB2= 2A
For BUS13A IC= 8A ;IB1= -IB2= 1.6A |
|
| 1.0 | μs | |
tstg | Storage Time |
|
| 4.0 | μs | ||
tf | Fall Time |
|
| 0.8 | μs |
DESCRIPTION ·High Power Dissipation-: PC= 80W(Max.)@TC=25℃·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min.)·Complement to Type 2SC2261 APPLICATIONS·Designed for general purpose applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-120VVCEOCollector-Emitter Voltage-120VVEBOEmitter-Base Voltage-6VICCollector Current-Continuous -8AIBBase Current-Continuous -3APCCollector Power Dissipation@TC=25℃80WTjJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA ;IB= 0-120 VVCE(sat)Collector-Emitter Saturation VoltageIC= -3A; IB= -0.3A -1.5VICBOCollector Cutoff CurrentVCB= -120V; IE= 0 -1.0mAIEBOEmitter Cutoff CurrentVEB= -6V; IC= 0 -1.0mAhFEDC Current GainIC= -3A; VCE= -4V30 fTCurrent-Gain—Bandwidth ProductIE= 0.5A; VCE= -12V 2...
DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 450V(Min)·Fast Switching speed APPLICATIONS·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage 600VVCEOCollector-Emitter Voltage 450VVCEXCollector-Emitter Voltage VEB= 5V 600VVEBOEmitter-Base Voltage7VICCollector Current-Continuous10AICMCollector Current-Peak20AIBBase Current-Continuous4AIBMBase Current-Peak8APTTotal Power Dissipation@ TC=25℃65WTJJunctionTemperature150℃TstgStorageTemperature Range-55~150℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance,Junction to Case1.92℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.2A; IB= 0450 VVCE(sat)Collector-Emitter Saturation VoltageIC= 5A; ...