价 格: | 4.50 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SD1063 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 4A
·Wide Area of Safe Operation
·Complement to Type 2SB827
APPLICATIONS
·Designed for universal high current switching as solenoid
driving, high speed inverter and converter applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 60 | V |
VCEO | Collector-Emitter Voltage | 50 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 7 | A |
ICP | Collector Current-Pulse | 14 | A |
PC | Collector Power Dissipation @ TC=25℃ | 60 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT | |||
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 1mA ; RBE=∞ | 50 |
|
| V | |||
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= 1mA ; IE= 0 | 60 |
|
| V | |||
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= 1mA ; IC= 0 | 6 |
|
| V | |||
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4A; IB= 0.4A |
|
| 0.4 | V | |||
ICBO | Collector Cutoff Current | VCB= 40V; IE= 0 |
|
| 100 | μA | |||
IEBO | Emitter Cutoff Current | VEB= 4V; IC=0 |
|
| 100 | μA | |||
hFE-1 | DC Current Gain | IC= 1A; VCE= 2V | 70 |
| 280 |
| |||
hFE-2 | DC Current Gain | IC= 5A; VCE= 2V | 30 |
|
|
| |||
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 5V | 10 |
| MHz | ||||
Switching times | |||||||||
ton | Turn-on Time | IC= 2A; IB1= -IB2= 0.2A RL= 10Ω;PW=20μs; VCC= 20V |
| 0.2 |
| μs | |||
tstg | Storage Time |
| 0.9 |
| μs | ||||
tf | Fall Time |
| 0.3 |
| μs | ||||
u hFE-1Classifications
Q | R | S |
70-140 | 100-200 | 140-280 |
DESCRIPTION ·High Switching Speed·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 400V (Min)-BUS13450V (Min)-BUS13A APPLICATIONS·Designed for use in converters, inverters, switchingregulators, motor control systems etc. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERMAXUNITVCESCollector- EmitterVoltage(VBE= 0) BUS13850VBUS13A1000VCEOCollector-Emitter Voltage BUS13400VBUS13A450VEBOEmitter-Base Voltage9VICCollector Current-Continuous15AICMCollector Current-Peak tp< 2ms30AIBBase Current-Continuous6AIBMBase Current-Peak tp< 2ms9APCCollector Power Dissipation@TC=25℃175WTjJunction Temperature200℃TstgStorageTemperature Range-65~200℃ THERMAL CHARACTERISTICSSYMBOLPARAMETERMAXUNITRth j-cThermal Resistance, Junction to Case1.0℃/W ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageBU...
DESCRIPTION ·High Power Dissipation-: PC= 80W(Max.)@TC=25℃·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min.)·Complement to Type 2SC2261 APPLICATIONS·Designed for general purpose applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-120VVCEOCollector-Emitter Voltage-120VVEBOEmitter-Base Voltage-6VICCollector Current-Continuous -8AIBBase Current-Continuous -3APCCollector Power Dissipation@TC=25℃80WTjJunction Temperature150℃TstgStorage Temperature-65~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA ;IB= 0-120 VVCE(sat)Collector-Emitter Saturation VoltageIC= -3A; IB= -0.3A -1.5VICBOCollector Cutoff CurrentVCB= -120V; IE= 0 -1.0mAIEBOEmitter Cutoff CurrentVEB= -6V; IC= 0 -1.0mAhFEDC Current GainIC= -3A; VCE= -4V30 fTCurrent-Gain—Bandwidth ProductIE= 0.5A; VCE= -12V 2...