价 格: | 0.10 | |
是否提供加工定制: | 否 | |
品牌/商标: | UTC(台湾友顺) | |
型号/规格: | HE8551 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
击穿电压VCBO: | 咨询业务(V) | |
集电极允许电流ICM: | 咨询业务(A) | |
集电极耗散功率PCM: | 咨询业务(W) | |
截止频率fT: | 咨询业务(MHz) | |
结构: | 点接触型 | |
封装形式: | TO-92 | |
封装材料: | 塑料封装 |
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The UTC HE8051 is a low voltage high current small signal NPN
transistor, designed for Class B push-pull 2W audio amplifier for
portable radio and general purpose applications.
FEATURES
* Collector current up to 1.5A
* Collector-Emitter voltage up to 25 V
* complimentary to UTC HE8551
DESCRIPTIONThe UT3N01Z uses UTC advanced technology to provide excellentRDS(ON), low gate charge and operation with low gate voltages. Thisdevice’s general purpose is for switching device applications. FEATURES* RDS(ON) = 3.7Ω @VGS = 4 V* Ultra low gate charge ( typical 1.58 nC )* Low reverse transfer capacitance ( CRSS = typical 2.3 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness* Halogen-Free
1、TO-251小插件封装(如图,参考图片)。3K/盒 2、从华晶定做的足1A电流的1N60,大批量特价现货供应。 3、发货期1个工作日。支持支付宝和珠三角快递代收。 General Description?CS1N60C3H, the silicon N-channel EnhancedVDMOSFETs, is obtained by the self-aligned planar Technologywhich reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistorcan be used in various power switching circuit for systemminiaturization and higher efficiency. The package form is TO-251,which accords with the RoHS standard.Features?z Fast Switchingz Low ON Resistance(Rdso小于等于12欧姆) z Low Gate Charge (Typical Data:6nC)z Low Reverse transfer capacitances(Typical:2.7pF)z 100% Single Pulse avalanche energy Test VDSS 600 VID 1.0 APD (TC=25?) 30 WRDS(ONMax. 12dzsc/18/9988/18998864.jpg