价 格: | 0.10 | |
品牌/商标: | UTC/友顺 | |
型号/规格: | UT3N01Z | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 |
DESCRIPTION
The UT3N01Z uses UTC advanced technology to provide excellent
RDS(ON), low gate charge and operation with low gate voltages. This
device’s general purpose is for switching device applications.
FEATURES
* RDS(ON) = 3.7Ω @VGS = 4 V
* Ultra low gate charge ( typical 1.58 nC )
* Low reverse transfer capacitance ( CRSS = typical 2.3 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
* Halogen-Free
1、TO-251小插件封装(如图,参考图片)。3K/盒 2、从华晶定做的足1A电流的1N60,大批量特价现货供应。 3、发货期1个工作日。支持支付宝和珠三角快递代收。 General Description?CS1N60C3H, the silicon N-channel EnhancedVDMOSFETs, is obtained by the self-aligned planar Technologywhich reduce the conduction loss, improve switchingperformance and enhance the avalanche energy. The transistorcan be used in various power switching circuit for systemminiaturization and higher efficiency. The package form is TO-251,which accords with the RoHS standard.Features?z Fast Switchingz Low ON Resistance(Rdso小于等于12欧姆) z Low Gate Charge (Typical Data:6nC)z Low Reverse transfer capacitances(Typical:2.7pF)z 100% Single Pulse avalanche energy Test VDSS 600 VID 1.0 APD (TC=25?) 30 WRDS(ONMax. 12dzsc/18/9988/18998864.jpg
DESCRIPTIONThe UP9T15GL uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch or inPWM applications. FEATURES* VDS(V)=20V* ID=12 .5A (VGS=4.5V)* RDS(ON)<50mΩ@ VGS =4.5 V, ID =6 A* RDS(ON)<80mΩ@ VGS =2.5 V, ID =5.2 A