大批现货供应足1A电流600V之1N60 场效应管 CS1N60
| 价 格： | 0.48 | |
| 品牌/商标： | CS1N60 | |
| 型号/规格： | CS1N60 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | L/功率放大 | |
| 封装外形： | SMD(SO)/表面封装 | |
| 材料： | N-FET硅N沟道 |
1、TO-251小插件封装(如图,参考图片)。3K/盒
2、从华晶定做的足1A电流的1N60，大批量特价现货供应。
3、发货期1个工作日。支持支付宝和珠三角快递代收。
General Description?
CS1N60C3H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features?
z Fast Switching
z Low ON Resistance(Rdso小于等于12欧姆）
z Low Gate Charge (Typical Data:6nC)
z Low Reverse transfer capacitances(Typical:2.7pF)
z 100% Single Pulse avalanche energy Test
VDSS 600 V
ID 1.0 A
PD (TC=25?) 30 W
RDS(ONMax. 12
dzsc/18/9988/18998864.jpg
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