价 格: | 9.00 | |
是否提供加工定制: | 是 | |
品牌/商标: | ISC | |
型号/规格: | 2SD1298 | |
应用范围: | 放大 | |
材料: | 硅(Si) | |
极性: | NPN型 | |
结构: | 平面型 | |
封装形式: | 直插型 | |
封装材料: | 塑料封装 |
DESCRIPTION
·High DC Current Gain
: hFE= 200(Min.)@ IC= 6A, VCE= 2V
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·LowCollector Saturation Voltage
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 8 | V |
IC | Collector Current-Continuous | 10 | A |
ICM | Collector Current-Peak | 20 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Collector Power Dissipation @Ta=25℃ | 3.0 | ||
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA, IB= 0 | 400 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 6A, IB= 60mA |
|
| 1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 6A, IB= 60mA |
|
| 2.2 | V |
ICBO | Collector Cutoff current | VCB= 400V, IE= 0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 8V; IC= 0 |
|
| 100 | mA |
hFE | DC Current Gain | IC= 6A; VCE= 2V | 200 |
| 5000 |
|
Switching Times | ||||||
ton | Turn-On Time | IC= 6A,IB1= -IB2= 60mA |
| 1.5 |
| μs |
tstg | Storage Time |
| 7.0 |
| μs | |
tf | Fall Time |
| 4.0 |
| μs |
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min)·High Current Capability·Wide Area of Safe Operation·Complement to Type 2SD732 APPLICATIONS·Designed for AF power amplifier applications.·Recommended for output stage of 60W power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-150VVCEOCollector-Emitter Voltage-120VVEBOEmitter-Base Voltage-6VICCollector Current-Continuous-8AICMEmitter Current-Peak-12APCCollector Power Dissipation@TC=25℃80WTJJunction Temperature150℃TstgStorage Temperature-40~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CEOCollector-Emitter Breakdown VoltageIC= -5mA; RBE=∞-120 VV(BR)CEOCollector-Emitter Breakdown VoltageIC= -50mA; RBE=∞-120 VV(BR)CBOCollector-BaseBreakdownVoltageIC= -5mA; IE= 0-150 VV(BR)EBOEmitter-BaseBreakdownVoltag...
DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -150V(Min.)·Wide Area of Safe Operation APPLICATIONS·Designed for audio power amplifier applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-150VVCEOCollector-Emitter Voltage-150VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -7AICMCollector Current-Peak -11APCCollector Power Dissipation@TC=25℃80WTjJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CBOCollector-Base Breakdown VoltageIC= -1mA; IE= 0-150 V(BR)CEOCollector-Emitter Breakdown VoltageIC= -25mA; IB= 0-150 VV(BR)EBOEmitter-Base Breakdown VoltageIE= -1mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -5A; IB= -0.5A -2.0VVBE(sat)Base-EmitterSaturationVoltageIC= -5A; IB= -0.5A -2.5VICBOCollector Cutoff CurrentVCB= -150V; IE= 0 -0.1mAIEBOEmitter ...