无锡固电ISC 供应2SB696三极管
| 价 格： | 10.00 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC | |
| 型号/规格： | 2SB696 | |
| 应用范围： | 放大 | |
| 材料： | 硅(Si) | |
| 极性： | PNP型 | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 金属封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SD732
APPLICATIONS
·Designed for AF power amplifier applications.
·Recommended for output stage of 60W power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -150 | V |
VCEO | Collector-Emitter Voltage | -120 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -8 | A |
ICM | Emitter Current-Peak | -12 | A |
PC | Collector Power Dissipation @TC=25℃ | 80 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -40~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -5mA; RBE=∞ | -120 |
|
| V |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; RBE=∞ | -120 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= -5mA; IE= 0 | -150 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -5mA; IC= 0 | -6 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
| -0.6 |
| V |
VBE(on) | Base-Emitter On Voltage | IC= -1A; VCE= -5V |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -80V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -4V; IC= 0 |
|
| -0.1 | mA |
hFE | DC Current Gain | IC= -1A; VCE= -5V | 40 |
| 320 |
|
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -5V |
| 15 |
| MHz |
u hFEClassifications
C | D | E | F |
40-80 | 60-120 | 100-200 | 160-320 |
- 所属城市：江苏 无锡
- [联系时请说明来自维库仪器仪表网]
- 联系人： 王燕
- 电话：0510-85346980
- 传真：0510-85346750
- 手机：15961889150
- QQ ：
无锡固电ISC 供应2SA649三极管
信息内容：DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -150V(Min.)·Wide Area of Safe Operation APPLICATIONS·Designed for audio power amplifier applications. Absolute maximum ratings(Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage-150VVCEOCollector-Emitter Voltage-150VVEBOEmitter-Base Voltage-5VICCollector Current-Continuous -7AICMCollector Current-Peak -11APCCollector Power Dissipation@TC=25℃80WTjJunction Temperature150℃TstgStorage Temperature-55~150℃ ELECTRICAL CHARACTERISTICSTj=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITV(BR)CBOCollector-Base Breakdown VoltageIC= -1mA; IE= 0-150 V(BR)CEOCollector-Emitter Breakdown VoltageIC= -25mA; IB= 0-150 VV(BR)EBOEmitter-Base Breakdown VoltageIE= -1mA; IC= 0-5 VVCE(sat)Collector-Emitter Saturation VoltageIC= -5A; IB= -0.5A -2.0VVBE(sat)Base-EmitterSaturationVoltageIC= -5A; IB= -0.5A -2.5VICBOCollector Cutoff CurrentVCB= -150V; IE= 0 -0.1mAIEBOEmitter ...
无锡固电ISC 供应TIP120三极管
信息内容：供应TIP120三极管,TO-220,有意者请联系！DESCRIPTION·High DC Current Gain-: hFE= 1000(Min)@IC=3A·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min)·Low Collector-Emitter Saturation Voltage- :VCE(sat)= 2.0V(Max)@ IC=3A= 4.0V(Max)@ IC=5A·Complement to Type TIP125 APPLICATIONS·Designed for general purpose amplifier and low speedswitching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)SYMBOLPARAMETERVALUEUNITVCBOCollector-Base Voltage60VVCEOCollector-Emitter Voltage60VVEBOEmitter-Base Voltage5VICCollector Current-Continuous5AICMCollector Current-Peak8AIBBase Current120mAPCCollector Power DissipationTC=25℃65WCollector Power DissipationTa=25℃2TjJunction Temperature150℃TstgStorageTemperature Range-65~150℃ELECTRICAL CHARACTERISTICSTC=25℃unless otherwise specifiedSYMBOLPARAMETERCONDITIONSMINTYP.MAXUNITVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 0.1A, IB= 060 VVCE(sat)-1Collector-Emitter Saturation VoltageIC= 3A ,IB= 12mA 2.0VVCE(sat)-2...
