无锡固电ISC 供应2SA649三极管
| 价 格： | 10.00 | |
| 是否提供加工定制： | 是 | |
| 品牌/商标： | ISC | |
| 型号/规格： | 2SA649 | |
| 应用范围： | 放大 | |
| 材料： | 硅(Si) | |
| 极性： | PNP型 | |
| 结构： | 平面型 | |
| 封装形式： | 直插型 | |
| 封装材料： | 塑料封装 |
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for audio power amplifier applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -150 | V |
VCEO | Collector-Emitter Voltage | -150 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -7 | A |
ICM | Collector Current-Peak | -11 | A |
PC | Collector Power Dissipation @TC=25℃ | 80 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -1mA; IE= 0 | -150 |
|
|
|
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -25mA; IB= 0 | -150 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -2.0 | V |
VBE(sat) | Base-EmitterSaturationVoltage | IC= -5A; IB= -0.5A |
|
| -2.5 | V |
ICBO | Collector Cutoff Current | VCB= -150V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -0.1 | mA |
hFE | DC Current Gain | IC= -3A; VCE= -5V | 30 |
| 120 |
|
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -5V |
| 10 |
| MHz |
"
- 所属城市：江苏 无锡
- [联系时请说明来自维库仪器仪表网]
- 联系人： 王燕
- 电话：0510-85346980
- 传真：0510-85346750
- 手机：15961889150
- QQ ：
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