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TOSHIBA东芝全新进口原装场效应管系列 2SK2604 K2604

价 格: 面议
品牌:TOSHIBA/东芝
型号:2SK2604 K2604
种类:结型(JFET)
沟道类型:P沟道
导电方式:耗尽型
用途:MW/微波
封装外形:CER-DIP/陶瓷直插
材料:SIT静电感应
开启电压:33(V)
夹断电压:33(V)
跨导:33(μS)
极间电容:33(pF)
低频噪声系数:33(dB)
漏极电流:3(mA)
耗散功率:2(mW)

TOSHIBA东芝全新进口原装场效应管系列 2SK2604  K2604

 

TOSHIBA东芝全新进口原装场效应管系列 2SK2604  K2604

 

2SK2604  K2604产品规格  参数

 

Datasheets 2SK2604
Mosfets Prod Guide
Standard Package 3,000
Category Discrete Semiconductor Products
Family FETs - Single
Series -
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25° C 5A
Rds On (Max) @ Id, Vgs 2.2 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 34nC @ 10V
Input Capacitance (Ciss) @ Vds 1080pF @ 25V
Power - Max 125W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P(N)
Packaging Tape & Reel (TR)

结型场效应管 深圳市福田区宏诚辉电子商行
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