价 格: | 面议 | |
品牌/商标: | FAIRCHILD/仙童 | |
型号/规格: | FCH47N60F | |
种类: | 结型(JFET) | |
沟道类型: | N沟道 | |
导电方式: | 耗尽型 | |
用途: | MOS-FBM/全桥组件 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | P-FET硅P沟道 |
仙童FSC进口原装场效应管 FCH47N60F
仙童FSC进口原装场效应管 FCH47N60F
FCH47N60F 产品规格 参数 PDF
Datasheets FCH47N60F
Product Photos TO-247-3 Pkg
Catalog Drawings MOSFET TO-247 Pkg
Standard Package 30
Category Discrete Semiconductor Products
Family FETs - Single
Series SuperFET™
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25° C 47A
Rds On (Max) @ Id, Vgs 73 mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 270nC @ 10V
Input Capacitance (Ciss) @ Vds 8000pF @ 25V
Power - Max 417W
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Packaging Tube
IR进口原装场效应管/散新场效应管 IRFP26N60L IR进口原装场效应管/散新场效应管 IRFP26N60L IRFP26N60L产品规格 参数 Datasheets IRFP26N60LPBFProduct Photos TO-247-3Catalog Drawings IRFP Series Side 1IRFP Series Side 2Standard Package 500Category Discrete Semiconductor ProductsFamily FETs - SingleSeries -FET Type MOSFET N-Channel, Metal OxideFET Feature StandardDrain to Source Voltage (Vdss) 600VCurrent - Continuous Drain (Id) @ 25° C 26ARds On (Max) @ Id, Vgs 250 mOhm @ 16A, 10VVgs(th) (Max) @ Id 5V @ 250µAGate Charge (Qg) @ Vgs 180nC @ 10VInput Capacitance (Ciss) @ Vds 5020pF @ 25VPower - Max 470WMounting Type Through HolePackage / Case TO-247-3Supplier Device Package TO-247-3Packaging TubeCatalog Page 1308 (US2011 Interactive)1308 (US2011 PDF)Other Names *IRFP26N60LPBF"
制造商: Fairchild Semiconductor 产品种类: MOSFET 功率 RoHS: 详细信息 配置: Single 晶体管极性: N-Channel 电阻汲极/源极 RDS(导通): 2 Ohms 正向跨导 gFS(值/最小值) : 4.8 S 汲极/源极击穿电压: 600 V 闸/源击穿电压: /- 30 V 漏极连续电流: 5.5 A 功率耗散: 40 W 工作温度: 150 C 安装风格: Through Hole 封装 / 箱体: TO-220F 封装: Tube 最小工作温度: - 55 C 零件号别名: FQPF6N60C_NL