仙童、FQP30N06、30N06、MOS、场效应管、开关电源
| 价 格： | 1.00 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | FQP30N06 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 材料： | N-FET硅N沟道 | |
| 开启电压： | 10（V） | |
| 夹断电压： | 60（V） | |
| 跨导： | 1000（μS） | |
| 极间电容： | 40（pF） | |
| 低频噪声系数： | 1（dB） | |
| 漏极电流： | 300000（mA） | |
| 耗散功率： | 790000（mW） |
FQP30N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 40 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈培忠
- 电话：0755-84746465
- 传真：0755-84746465
- 手机：
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仙童8N80、FQP8N80C、8N80MOS管、8N80
信息内容：FQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies.Features• 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V• Low gate charge ( typical 35 nC)• Low Crss ( typical 13 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• RoHS Compliant
FDA18N50、18N50、TO-3P、MOS管
信息内容：FDA18N50500V N-Channel MOSFETFeatures• 19A, 500V, RDS(on) = 0.265Ω @VGS = 10 V• Low gate charge ( typical 45 nC)• Low Crss ( typical 25 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityDescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary, planarstripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies and active power factorcorrection.
