仙童8N80、FQP8N80C、8N80MOS管、8N80
| 价 格： | 1.00 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | FQP8N80C | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 材料： | N-FET硅N沟道 | |
| 开启电压： | 10（V） | |
| 夹断电压： | 800（V） | |
| 极间电容： | 13（pF） | |
| 低频噪声系数： | 2（dB） | |
| 漏极电流： | 8000（mA） | |
| 耗散功率： | 590000（mW） |
FQP8N80C/FQPF8N80C/FQPF8N80CYDTU
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈培忠
- 电话：0755-84746465
- 传真：0755-84746465
- 手机：
- QQ ：
FDA18N50、18N50、TO-3P、MOS管
信息内容：FDA18N50500V N-Channel MOSFETFeatures• 19A, 500V, RDS(on) = 0.265Ω @VGS = 10 V• Low gate charge ( typical 45 nC)• Low Crss ( typical 25 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityDescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary, planarstripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies and active power factorcorrection.
仙童FQA9N90C、9N90、MOS管、场效应管
信息内容：Features• 9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V• Low gate charge ( typical 45 nC)• Low Crss ( typical 14pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• RoHS compliantDescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary, planarstripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology.TO-3PN"
