FDA18N50、18N50、TO-3P、MOS管
| 价 格： | 1.00 | |
| 品牌/商标： | FAIRCHILD/仙童 | |
| 型号/规格： | FDA18N50 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 增强型 | |
| 用途： | SW-REG/开关电源 | |
| 材料： | N-FET硅N沟道 | |
| 开启电压： | 10（V） | |
| 夹断电压： | 500（V） | |
| 极间电容： | 25（pF） | |
| 低频噪声系数： | 2（dB） | |
| 漏极电流： | 18000（mA） | |
| 耗散功率： | 239000（mW） |
FDA18N50
500V N-Channel MOSFET
Features
• 19A, 500V, RDS(on) = 0.265Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 陈培忠
- 电话：0755-84746465
- 传真：0755-84746465
- 手机：
- QQ ：
仙童FQA9N90C、9N90、MOS管、场效应管
信息内容：Features• 9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V• Low gate charge ( typical 45 nC)• Low Crss ( typical 14pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• RoHS compliantDescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary, planarstripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology.TO-3PN"
原装飞兆BU406、406三极管、仙童三极管BU406
信息内容：BU406NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise notedElectrical Characteristics TC=25°C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 400 VVCEO Collector-Emitter Voltage 200 VVEBO Emitter-Base Voltage 6 VIC Collector Current (DC) 7 AICP Collector Current (Pulse) 10 AIB Base Current 4 APC Collector Dissipation 60 WTJ Junction Temperature 150 °CTSTG Storage Temperature - 55 ~ 150 °C
