供应 场效应管 HAT2195WP,HAT2195
| 价 格： | 面议 | |
| 型号/规格： | HAT2195WP,QFN-8 5*6/WPAK,SMD/MOS,N场,30V,40A,0.0053Ω | |
| 品牌/商标： | RENESAS（瑞萨） | |
| 封装形式： | QFN-8 5*6/WPAK | |
| 环保类别： | 无铅环保型 | |
| 安装方式： | 贴片式 | |
| 包装方式： | 2500/盘 |
RJK0351DPA,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,30V,40A,0.0042Ω,2.5V
RJK0346DPA,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,30V,65A,0.002Ω,2.5V
RJK0353DPA,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,30V,35A,0.0052Ω,2.5V
RJK0364DPA,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,30V,35A,0.0078Ω,2.5V
RJK0349DPA,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,30V,45A,0.0031Ω,2.5V
RJK0351DPA,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,30V,40A,0.0042Ω,2.5V
RJK0353DPA,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,30V,35A,0.0052Ω,2.5V
RJK0355DPA,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,30V,30A,0.0107Ω,2.5V
RJK0358DPA,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,30V,38A,0.0034Ω,2.5V
RJK0365DPA,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,30V,30A,0.0091Ω,2.5V
RJK0366DPA,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,30V,25A,0.0111Ω,2.5V
HAT2285WP,RENESAS/瑞萨,QFN8 5*6/WPAK,双NMOS,30V,14A/22A,0.024Ω,2.5V
HAT2200WP,RENESAS/瑞萨,QFN8 5*6/WPAK,NMOS,100V,20A,0.028Ω,5V
HAT2192WP,RENESAS/瑞萨,QFN-8 5*6/WPAK,NMOS,250V,10A,0.23Ω,4.5V
HAT2195WP,RENESAS/瑞萨,QFN-8 5*6/WPAK,NMOS,30V,40A,0.0053Ω,
RJK0348DPA,RENESAS/瑞萨,QFN-8 5*6/WPAK,NMOS,30V,50A,0.0025Ω,2.5V
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 方小姐/陈小姐/刘小姐/钟小姐
- 电话：0755-82814431/82814432
- 传真：0755-83957820
- 手机：15914096884
- QQ ：
供应 场效应管 HAT2285WP,HAT2285,HAT2093R
信息内容：产品型号:HAT2285WP 特点 ?低导通电阻 ?可4.5 V门极驱动 ?高密度安装 ?内置的肖特基势垒二极管 封装:QFN-8 5*6/WPAK 源漏极间雪崩电压V(br)dss(V):30/30 夹断电压VGS(V):±20/±12 漏极电流Id(A):14/22 源漏极导通电阻rDS(on)(Ω):0.024 @VGS = 10 V 开启电压VGS(TH)(V):2.5 功率PD(W):8/15 输入电容Ciss(PF):630 typ. 通道极性:N沟道 低频跨导gFS(s)：18 单脉冲雪崩能量EAR(mJ):40 导通延迟时间Td(on)(ns):7 typ. 上升时间Tr(ns):30 typ. 关断延迟时间Td(off)(ns):35 typ. 下降时间Tf(ns):3.6 typ. 温度(℃): –55 to +150/–55 to +150 描述:30V 14A/30V 22A N-沟道增强型场效应晶体管 (产品图片,产品参数,产品PDF等产品相关信息在线了解\查询\下载.)
供应 场效应管 Si7170DP-T1-GE3,Si7170DP,7176
信息内容：产品型号:Si7170DP-T1-GE3 特点 * 无卤素 * TrenchFET Power MOSFET * 100%的Rg测试 * 1005的雪崩测试 应用 * 低端笔记本电脑 * VRM POL 封装:QFN-8 5*6/PowerPAK SO-8 源漏极间雪崩电压V(br)dss(V):30 夹断电压VGS(V):±20 漏极电流Id(A):40 源漏极导通电阻rDS(on)(Ω):0.0034 @VGS = 10 V 开启电压VGS(TH)(V):2.6 功率PD(W):48 输入电容Ciss(PF):4355 typ. 通道极性:N沟道 低频跨导gFS(s)：90 单脉冲雪崩能量EAS(mJ):80 导通延迟时间Td(on)(ns):15 typ. 上升时间Tr(ns):10 typ. 关断延迟时间Td(off)(ns):35 typ. 下降时间Tf(ns):8 typ. 温度(℃): -55 ~150 描述:30V,40A N-沟道增强型场效应晶体管
