价 格: | 4.20 | |
品牌/商标: | IR/国际整流器 | |
型号/规格: | IRF1405PBF IRF1405TRPBF | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | CC/恒流 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | ALGaAS铝镓砷 |
IRF1405 |
IRF1405L |
IRF1405LPBF |
IRF1405PBF |
IRF1405S |
IRF1405SPBF |
IRF1405STRL |
IRF1405STRLPBF |
IRF1405STRR |
IRF1405STRRPBF |
IRF1405Z |
IRF1405ZL |
IRF1405ZL-7P |
IRF1405ZL-7PPBF |
IRF1405ZLPBF |
IRF1405ZPBF |
IRF1405ZS |
IRF1405ZS-7P |
IRF1405ZS-7PPBF |
IRF1405ZSPBF |
IRF1405ZSTRL-7P |
IRF1405ZSTRLPBF |
IRF1405ZSTRRPBF |
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, All High Voltage Pins on One Side, Separate Logic and Power Ground in a 14-lead SOIC package "
MOSFET, 75V, 100A, 7.8 mOhm, 160 nC Qg, D2-PakAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxBenefitsPD -94335Parameter Typ. Max. UnitsRθJC Junction-to-Case ––– 0.75 °C/WRθJA Junction-to-Ambient(PCB Mounted,steady-state)** ––– 40Thermal ResistanceAdvanced HEXFET® Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides the highestpower capability and the lowest possible on-resistance in anyexisting surface moun...