价 格: | 8.00 | |
品牌/商标: | IR/国际整流器 | |
型号/规格: | IRF1407STRRPBF | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 耗尽型 | |
用途: | HF/高频(射频)放大 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | ALGaAS铝镓砷 |
MOSFET, 75V, 100A, 7.8 mOhm, 160 nC Qg, D2-Pak
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Benefits
PD -94335
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75 °C/W
RθJA Junction-to-Ambient(PCB Mounted,steady-state)** ––– 40
Thermal Resistance
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF1407L) is available for lowprofile
applications.
大量IR2520D现货, 优惠价格供应。ParameterValuePackage 8-pin DIP Circuit Fluorescent Ballast IC Offset Voltage (V) 600 PbF PbF Option Available SpecificationsParameterValuePackage 8-pin DIPCircuit Fluorescent Ballast ICOffset Voltage (V) 600PbF PbF Option Available
深圳香港真实库存现货,原装。ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)PARAMETER SYMBOL LIMIT UNITDrain-Source Voltage VDS 400VGate-Source Voltage VGS ± 20Continuous Drain Current VGS at 10 VTC = 25 °CID10TC = 100 °C 6.3 APulsed Drain Currenta IDM 40Linear Derating Factor 1.0 W/°CSingle Pulse Avalanche Energyb EAS 520 mJRepetitive Avalanche Currenta IAR 10 ARepetitive Avalanche Energya EAR 13 mJMaximum Power Dissipation TC = 25 °C PD 125 WPeak Diode Recovery dV/dtc dV/dt 4.0 V/nsOperating Junction and Storage Temperature Range TJ, Tstg - 55 to 150°CSoldering Recommendations (Peak Temperature) for 10 s 300dMounting Torque 6-32 or M3 screw"