价 格: | 1.50 | |
品牌: | IR/VISHAY | |
型号: | IRF730PBF | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | L/功率放大 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | N-FET硅N沟道 | |
开启电压: | 20(V) | |
夹断电压: | 20(V) | |
跨导: | 5(μS) | |
极间电容: | 20(pF) | |
低频噪声系数: | 1(dB) | |
漏极电流: | 30(mA) | |
耗散功率: | 50(mW) |
深圳香港真实库存现货,原装。
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 400
V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V
TC = 25 °C
ID
10
TC = 100 °C 6.3 A
Pulsed Drain Currenta IDM 40
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energyb EAS 520 mJ
Repetitive Avalanche Currenta IAR 10 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 4.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw
MOSFET, 30V, 18A, 4.8 mOhm, 17 nC Qg, SO-8 深圳现货,IR原装。我们只做原装,需要散心的请绕行。IR ST vishay NXP 代理。
MOSFET, 30V, 21A, 3.7 mOhm, 30 nC Qg, SO-8深圳现货,IR原装。 我们只做原装,需要散心的请绕行。IR ST vishay NXP 代理。