价 格: | 0.10 | |
品牌: | IR/国际整流器 | |
型号: | IRS21064STRPBF | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 耗尽型 | |
用途: | L/功率放大 | |
封装外形: | CER-DIP/陶瓷直插 | |
材料: | GE-N-FET锗N沟道 | |
开启电压: | 40(V) | |
夹断电压: | 30(V) | |
跨导: | 20(μS) | |
极间电容: | 25(pF) | |
低频噪声系数: | 30(dB) | |
漏极电流: | 20(mA) | |
耗散功率: | 25(mW) |
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, All High Voltage Pins on One Side, Separate Logic and Power Ground in a 14-lead SOIC package
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MOSFET, 75V, 100A, 7.8 mOhm, 160 nC Qg, D2-PakAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to TjmaxBenefitsPD -94335Parameter Typ. Max. UnitsRθJC Junction-to-Case ––– 0.75 °C/WRθJA Junction-to-Ambient(PCB Mounted,steady-state)** ––– 40Thermal ResistanceAdvanced HEXFET® Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides the highestpower capability and the lowest possible on-resistance in anyexisting surface moun...
大量IR2520D现货, 优惠价格供应。ParameterValuePackage 8-pin DIP Circuit Fluorescent Ballast IC Offset Voltage (V) 600 PbF PbF Option Available SpecificationsParameterValuePackage 8-pin DIPCircuit Fluorescent Ballast ICOffset Voltage (V) 600PbF PbF Option Available