供应可控硅BT134-600E
| 价 格： | 0.48 | |
| 品牌/商标： | PHILIPS/飞利浦 | |
| 型号/规格： | BT134-600E | |
| 控制方式： | 双向 | |
| 极数： | 三极 | |
| 封装材料： | 塑料封装 | |
| 封装外形： | 平底形 | |
| 关断速度： | 普通 | |
| 散热功能： | 带散热片 | |
| 频率特性： | 中频 | |
| 功率特性： | 中功率 | |
| 额定正向平均电流： | 4（A） | |
| 控制极触发电流： | 5~10（mA） | |
| 稳定工作电流： | 4（A） | |
| 反向重复峰值电压： | 600（V） |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb £ 107 °C - 4 A
ITSM Non-repetitive peak full sine wave; Tj = 25 °C prior to
on-state current surge
t = 20 ms - 25 A
t = 16.7 ms - 27 A
I2t I2t for fusing t = 10 ms - 3.1 A2s
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/ms
triggering T2 G - 50 A/ms
T2 G- - 50 A/ms
T2- G- - 50 A/ms
T2- G - 10 A/ms
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 °C
Tj Operating junction - 125 °C
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 许惠谦
- 电话：0755-82533222
- 传真：0755-82533222
- 手机：
- QQ ：
供应1A双向可控硅,Z0607MA
信息内容：Z00607MA STANDARD 0.8A TRIAC Table 1: Main FeaturesSymbol Value UnitIT(RMS) 0.8 AVDRM/VRRM 600 VIGT (Q1) 5 mA The Z00607MA is suitable for low power ACswitching applications, such as fan speed, smalllight controllers...Thanks to low gate triggering current, it can bedirectly driven by microcontrollers Table 3: Absolute Maximum RatingsSymbol Parameter Value UnitIT(RMS) RMS on-state current (full sine wave) Tl = 50°C 0.8 AITSM Non repetitive surge peak on-state F = 50 Hz t = 20 ms 9 A current (full cycle, Tj init...
供应可控硅BT136-600E
信息内容：LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT-600 -800VDRM Repetitive peak off-state - 6001 800 VvoltagesIT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C - 4 AITSM Non-repetitive peak full sine wave; Tj = 25 °C prior toon-state current surget = 20 ms - 25 At = 16.7 ms - 27 AI2t I2t for fusing t = 10 ms - 3.1 A2sdIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;on-state current after dIG/dt = 0.2 A/μstriggering T2 G - 50 A/μsT2 G- - 50 A/μsT2- G- - 50 A/μsT2- G - 10 A/μsIGM Peak gate current - 2 AVGM Peak gate voltage - 5 VPGM Peak gate power - 5 WPG(AV) Average gate power over any 20 ms period - 0.5 WTstg Storage temperature -40 150 °CTj Operating junction - 125 °C
