供应可控硅BT136-600E
| 价 格： | 0.65 | |
| 品牌/商标： | PHILIPS/飞利浦 | |
| 型号/规格： | BT136-600E | |
| 控制方式： | 双向 | |
| 极数： | 三极 | |
| 封装材料： | 塑料封装 | |
| 封装外形： | 平底形 | |
| 关断速度： | 普通 | |
| 散热功能： | 带散热片 | |
| 频率特性： | 中频 | |
| 功率特性： | 中功率 | |
| 额定正向平均电流： | 4（A） | |
| 控制极触发电流： | 10~20（mA） |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
VDRM Repetitive peak off-state - 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C - 4 A
ITSM Non-repetitive peak full sine wave; Tj = 25 °C prior to
on-state current surge
t = 20 ms - 25 A
t = 16.7 ms - 27 A
I2t I2t for fusing t = 10 ms - 3.1 A2s
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/μs
triggering T2 G - 50 A/μs
T2 G- - 50 A/μs
T2- G- - 50 A/μs
T2- G - 10 A/μs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 °C
Tj Operating junction - 125 °C
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供应场效应管FQPF4N60C
信息内容：FQPF4N60600V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply Features• 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V• Low gate charge ( typical 15 nC)• Low Crss ( typical 8.0 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
厂价直销E13007开关三极管
信息内容：MJE13006/13007High Voltage Switch Mode Application• High Speed Switching• Suitable for Switching Regulator and Motor Control NPN Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage : MJE13006: MJE13007600700VVVCEO Collector-Emitter Voltage : MJE13006: MJE13007300400VVVEBO Emitter- Base Voltage 9 VIC Collector Current (DC) 8 AICP Collector Current (Pulse) 16 AIB Base Current 4 APC Collector Dissipation (TC=25°C) 80 WTJ Junction Temperature 150 °CTSTG Storage Temperature - 65 ~ 150 °C
