供应1A双向可控硅,Z0607MA
| 价 格： | 0.22 | |
| 品牌/商标： | ST/意法 | |
| 型号/规格： | Z0607MA | |
| 控制方式： | 双向 | |
| 极数： | 三极 | |
| 封装材料： | 塑料封装 | |
| 封装外形： | 圆壳形 | |
| 关断速度： | 普通 | |
| 散热功能： | 不带散热片 | |
| 功率特性： | 小功率 | |
| 额定正向平均电流： | 1A（A） | |
| 控制极触发电流： | 1-5UA（mA） |
Z00607MA
STANDARD 0.8A TRIAC
Table 1: Main Features
Symbol Value Unit
IT(RMS) 0.8 A
VDRM/VRRM 600 V
IGT (Q1) 5 mA
The Z00607MA is suitable for low power AC
switching applications, such as fan speed, small
light controllers...
Thanks to low gate triggering current, it can be
directly driven by microcontrollers
Table 3: Absolute Maximum Ratings
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave) Tl = 50°C 0.8 A
ITSM Non repetitive surge peak on-state F = 50 Hz t = 20 ms 9 A
current (full cycle, Tj initial = 25°C) F = 60 Hz t = 16.7 ms 9.5 A
I²t I²t Value for fusing tp = 10 ms 0.45 A²s
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 110°C 20 A/μs
IGM Peak gate current tp = 20 μs Tj = 110°C 1 A
PG(AV) Average gate power dissipation Tj = 110°C 0.1 W
Tstg Storage junction temperature range - 40 to 150
TJ Operating junction temperature range - 40 to 110 °C
"
- 所属城市：广东 深圳
- [联系时请说明来自维库仪器仪表网]
- 联系人： 许惠谦
- 电话：0755-82533222
- 传真：0755-82533222
- 手机：
- QQ ：
供应可控硅BT136-600E
信息内容：LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT-600 -800VDRM Repetitive peak off-state - 6001 800 VvoltagesIT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C - 4 AITSM Non-repetitive peak full sine wave; Tj = 25 °C prior toon-state current surget = 20 ms - 25 At = 16.7 ms - 27 AI2t I2t for fusing t = 10 ms - 3.1 A2sdIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;on-state current after dIG/dt = 0.2 A/μstriggering T2 G - 50 A/μsT2 G- - 50 A/μsT2- G- - 50 A/μsT2- G - 10 A/μsIGM Peak gate current - 2 AVGM Peak gate voltage - 5 VPGM Peak gate power - 5 WPG(AV) Average gate power over any 20 ms period - 0.5 WTstg Storage temperature -40 150 °CTj Operating junction - 125 °C
供应场效应管FQPF4N60C
信息内容：FQPF4N60600V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply Features• 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V• Low gate charge ( typical 15 nC)• Low Crss ( typical 8.0 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability
