价 格: | 0.10 | |
品牌/商标: | UTC/友顺 | |
型号/规格: | UT4446 | |
种类: | 绝缘栅(MOSFET) | |
沟道类型: | N沟道 | |
导电方式: | 增强型 | |
用途: | SW-REG/开关电源 | |
封装外形: | SMD(SO)/表面封装 | |
材料: | N-FET硅N沟道 |
DESCRIPTION
The UT4446 uses UTC’s advanced trench technology to
provide excellent RDS(ON), low gate charge and operation with low
gate voltages. This device is suitable for use as a load switch or
in PWM applications.
FEATURES
* RDS(ON)< 8.5mΩ @VGS=10V
* RDS(ON)< 14.5mΩ @VGS=4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
800V N-CHANNEL POWER MOSFETDESCRIPTIONThe UTC 10N80 uses UTC’s advanced proprietary, planarstripe, DMOS technology to provide excellent RDS(ON), low gatecharge and operation with low gate voltages. This device issuitable for use as a load switch or in PWM applications.FEATURES* RDS(ON) = 1.1Ω @VGS = 10 V* Ultra low gate charge ( typical 45 nC )* Low reverse transfer capacitance ( CRSS = typical 15 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggedness
FeaturesType VDSS RDS(on) max IDSTS10N3LH5 30 V 0.021 Ω 10 A■ RDS(on) * Qg industry benchmark■ Extremely low on-resistance RDS(on)■ Very low switching gate charge■ High avalanche ruggedness■ Low gate drive power lossesApplication■ Switching applicationsDescriptionThis STripFET™V Power MOSFET technology isamong the latest improvements, which have beenespecially tailored to achieve very low on-stateresistance providing also one of the best-in-classFOM."