厂家推荐高品质MOS 800V高压场效应管 10N80
| 价 格： | 388.00 | |
| 品牌/商标： | UTC(台湾友顺） | |
| 型号/规格： | 10N80 | |
| 种类： | 绝缘栅(MOSFET) | |
| 沟道类型： | N沟道 | |
| 导电方式： | 耗尽型 | |
| 用途： | SW-REG/开关电源 | |
| 封装外形： | SMD(SO)/表面封装 | |
| 材料： | N-FET硅N沟道 |
800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N80 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) = 1.1Ω @VGS = 10 V
* Ultra low gate charge ( typical 45 nC )
* Low reverse transfer capacitance ( CRSS = typical 15 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
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ST品牌30V低导通阻值低压N-MOS管 STS10N3LH5
信息内容：FeaturesType VDSS RDS(on) max IDSTS10N3LH5 30 V 0.021 Ω 10 A■ RDS(on) * Qg industry benchmark■ Extremely low on-resistance RDS(on)■ Very low switching gate charge■ High avalanche ruggedness■ Low gate drive power lossesApplication■ Switching applicationsDescriptionThis STripFET™V Power MOSFET technology isamong the latest improvements, which have beenespecially tailored to achieve very low on-stateresistance providing also one of the best-in-classFOM."
现货特价供应VISHAY品牌IRF540
信息内容：原装进口IRF540现货特价供应！价格虚拟，有需求请询相关销售。 V DSS = 100VRDS(on) = 44m?ID = 33AAdvanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175 °C Operating TemperatureFast SwitchingFully Avalanche Rated
